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BSZ900N15NS3GATMA1

P1-P3P4-P6P7-P9
BSZ900N15NS3 G
1 Power dissipation 2 Drain current
P
tot
=f(T
C
) I
D
=f(T
C
); V
GS
≥10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D =0 Z
thJC
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
-1
t
p
[s]
Z
thJC
[K/W]
0
5
10
15
20
25
30
35
40
0 40 80 120 160
T
C
[°C]
P
tot
[W]
0
5
10
15
0 40 80 120 160
T
C
[°C]
I
D
[A]
1 µs
10 µs
100 µs
1 ms
DC
10
3
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
Rev. 2.1 page 4 2011-05-16
BSZ900N15NS3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
5 V
5.5 V
6 V
8 V
10 V
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0481216
I
D
[A]
R
DS(on)
[m
Ω
]
25 °C
150 °C
0
4
8
12
16
20
24
28
02468
V
GS
[V]
I
D
[A]
0
5
10
15
20
0102030
I
D
[A]
g
fs
[S]
4.5 V
5 V
5.5 V
6 V
7 V
10 V
0
5
10
15
20
25
30
0123
V
DS
[V]
I
D
[A]
Rev. 2.1 page 5 2011-05-16
BSZ900N15NS3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=10 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
parameter: I
D
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
20
40
60
80
100
120
140
160
180
200
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
]
20 µA
200 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
3
10
2
10
1
10
0
0 20406080100
V
DS
[V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
0 0.5 1 1.5 2
V
SD
[V]
I
F
[A]
Rev. 2.1 page 6 2011-05-16
P1-P3P4-P6P7-P9

BSZ900N15NS3GATMA1

Mfr. #:
Buy BSZ900N15NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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