IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA4N150HV
IXTT4N150HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-268 (HV) Outline
PIN:
1 - Gate
2 - Source
3 - Drain
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 2.8 4.6 S
C
iss
1576 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 105 pF
C
rss
35 pF
t
d(on)
19 ns
t
r
23 ns
t
d(off)
42 ns
t
f
22 ns
Q
g(on)
44.5 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
7.7 nC
Q
gd
21.7 nC
R
thJC
0.45 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 4 A
I
SM
Repetitive, Pulse Width Limited by T
JM
16 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.3 V
t
rr
0.9 μs
I
RM
15.0
A
Q
RM
6.7 μC
I
F
= 2A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5Ω (External)
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-263 (HV) Outline
PIN: 1 - Gate
2 - Source
3 - Drain
