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IXTT4N150HV

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA4N150HV
IXTT4N150HV
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
8
9
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
14
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 750V
I
D
= 2A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1000 10000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
Fig. 11. Breakdown and Threshold Voltages vs.
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV
DSS
& V
GS(th)
- Normalized
BV
DSS
V
GS(th)
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_4N150 (4A) 9-12-12-C
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXTA4N150HV
IXTT4N150HV
P1-P3P4-P5

IXTT4N150HV

Mfr. #:
Buy IXTT4N150HV
Manufacturer:
Littelfuse
Description:
MOSFET DISCMOSFET N-CH STD-HIVOLTAGE
Lifecycle:
New from this manufacturer.
Delivery:
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