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DMN3024SFG-13

P1-P3P4-P6P7-P7
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
1 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN3024SFG
ADVANCE INFORMATION
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
30V
23m @ V
GS
= 10V
7.5A
33m @ V
GS
= 4.5V
6.3 A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low R
DS(ON)
– ensures on state losses are minimized
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN3024SFG-7 POWERDI3333-8 2000/Tape & Reel
DMN3024SFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Bottom View
S
S
S
G
D
D
D
D
Pin 1
Top View
N34 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
N34
YYWW
POWERDI3333-8
1
2
3
4
8
7
6
5
Top View
Internal Schematic
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
2 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN3024SFG
ADVANCE INFORMATION
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
7.5
6.0
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
10.5
8.5
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
6.3
5.0
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
8.5
7.6
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
60 A
Avalanche Current (Note 7)
I
AS
9 A
Repetitive Avalanche Energy (Note 7)
E
AS
12 mJ
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.9
W
T
A
= 70°C
0.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
145
°C/W
t<10s 74
Total Power Dissipation (Note 6)
T
A
= 25°C
P
D
2.2
W
T
A
= 70°C
1.4
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
58
°C/W
t<10s 31
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
11
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .UIS in production with L = 0.3mH, TJ = 25°C
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
3 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN3024SFG
ADVANCE INFORMATION
Electrical Characteristics T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250 A
Zero Gate Voltage Drain Current
I
DSS
- - 1 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
1.0 1.3 2.4 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
- 15 23
m
V
GS
= 10V, I
D
= 10A
- 24 33
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance
|Y
fs
|
- 11 - S
V
DS
= 5V, I
D
= 10.0A
Diode Forward Voltage
V
SD
- 0.69 1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 479 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 97 - pF
Reverse Transfer Capacitance
C
rss
- 61 - pF
Gate Resistance
R
g
0.4 1.1 1.6
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
- 5.0 - nC
V
DS
= 15V, I
D
= 10A
Total Gate Charge V
GS
= 10V Q
g
- 10.5 - nC
Gate-Source Charge
Q
g
s
- 1.8 - nC
Gate-Drain Charge
Q
g
d
- 1.6 - nC
Turn-On Delay Time
t
D
(
on
)
- 2.9 - ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3, R
L
= 1.5,
Turn-On Rise Time
t
r
- 7.9 - ns
Turn-Off Delay Time
t
D
(
off
)
- 14.6 - ns
Turn-Off Fall Time
t
f
- 3.1 - ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
10
15
20
25
30
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
5
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 4.0V
GS
V = 10V
GS
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
AIN
EN
(A)
D
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS
P1-P3P4-P6P7-P7

DMN3024SFG-13

Mfr. #:
Buy DMN3024SFG-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A
Lifecycle:
New from this manufacturer.
Delivery:
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