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DMN3024SFG-13

P1-P3P4-P6P7-P7
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
4 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN3024SFG
ADVANCE INFORMATION
0102015 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
5
0.05
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.04
0.01
0.02
0.03
V = 3.5V
GS
V = 4.5V
GS
V = 10V
GS
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.04
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0.03
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
V = 10V
GS
T = 125°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
Ω
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
12
14
16
18
20
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
5 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN3024SFG
ADVANCE INFORMATION
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
1,000
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
100
C
iss
C
rss
C
oss
f = 1MHz
02 4 6 81012
Fig. 10 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
A
E-S
E V
L
A
E (V)
GS
V = 15V
I = 10A
DS
D
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
0
10
20
30
40
50
60
70
80
90
100
,
EAK
ANSIEN
IWE
(W)
(PK)
Single Pulse
R = 61C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
0.001 0.01 0.1 1 10 100
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 1,0000.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R (t) = r(t) * R
R = 54°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
6 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN3024SFG
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
POWERDI3333-8
Dim Min Max Typ
D 3.25 3.35 3.30
E 3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A 0.75 0.85 0.80
A1 0 0.05 0.02
A3
− −
0.203
b 0.27 0.37 0.32
b2
− −
0.20
L 0.35 0.45 0.40
L1
− −
0.39
e
− −
0.65
Z
− −
0.515
All Dimensions in mm
Dimensions Value (in mm)
C 0.650
G 0.230
G1 0.420
Y 3.700
Y1 2.250
Y2 1.850
Y3 0.700
X 2.370
X2 0.420
A
A1
A3
D
D2
E
E2
b2
(4x)
L
(4x)
L1
(3x)
b (8x)eZ (4x)
Pin 1 ID
14
85
X
Y
Y1
Y3
Y2
X2
C
14
85
G
G1
P1-P3P4-P6P7-P7

DMN3024SFG-13

Mfr. #:
Buy DMN3024SFG-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A
Lifecycle:
New from this manufacturer.
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