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NTHS5445T1

P1-P3P4-P6P7-P8
NTHS5445T1
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
1
20
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150°C
T
J
= 25°C
0.10
0.08
0.06
0.04
0
012 345
I
D
= 5.2 A
0.3
0.2
0.0
−0.2
−50 −25 0 25 50 75 100 125 150
I
D
= 250 µA
Power (W)
50
40
30
20
10
1010
−3 −2 −1
10 1 10 100 600
Time (sec)
10
0.4
0
0.02
−0.1
0.1
V
DS
, Drain−to−Source Voltage (V)
I
S,
Source Current (A)
V
GS
, Gate−to−Source Voltage (V)
r
DS(on),
On−Resistance (
Ω )
T
J
, Temperature (°C)
V
GS (th),
Varience (V)
Figure 7. Source−Drain Diode Forward Voltage Figure 8. On−Resistance vs. Gate−to−Source
Voltage
Figure 9. Threshold Voltage Figure 10. Single Pulse Power
NTHS5445T1
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
0.1
0.01
10 1010
−4 −3 −2 −1
10 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Single Pulse
0.1
0.05
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80°C/W
3. T
JM
−
T
A
= P
DM
Z
thJA
(t)
4. Surface Mounted
t
1
t
2
P
DM
Notes:
t
1
t
2
2
1
0.1
0.01
10 1010
−4 −3 −2 −1
10 1 10
0.02
Square Wave Pulse Duration (sec)
Duty Cycle = 0.5
0.2
Single Pulse
0.1
0.05
Normalized Effective Transient
Thermal Impedance
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot
NTHS5445T1
http://onsemi.com
6
PACKAGE DIMENSIONS
CHIPFET
CASE 1206A−01
ISSUE A
BS
C
D
G
L
A
1234
8765
M
J
K
1234
8765
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 2.95 3.10 0.116 0.122
B 1.55 1.70 0.061 0.067
C 1.00 1.10 0.039 0.043
D 0.25 0.35 0.010 0.014
G 0.65 BSC 0.025 BSC
J 0.10 0.15 0.004 0.008
K 0.30 0.45 0.012 0.018
L 0.55 BSC 0.022 BSC
M °5 NOM
S −−− 1.80 −−− 0.071
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
0.05 (0.002)
°5 NOM
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
P1-P3P4-P6P7-P8

NTHS5445T1

Mfr. #:
Buy NTHS5445T1
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 8V 5.2A CHIPFET
Lifecycle:
New from this manufacturer.
Delivery:
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