NTHS5445T1

NTHS5445T1
http://onsemi.com
7
80 mil
26
28
18 mil
25 mil
Figure 13. Figure 14.
80 mil
26
28
68 mil
mil
mil
mil
mil
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 14. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 13 improves the thermal area of the drain
connections (pins 1, 2, 3, 6, 7, 8) while remaining within the
confines of the basic footprint. The drain copper area is
0.0054 sq. in. (or 3.51 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
NTHS5445T1
http://onsemi.com
8
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NTHS5445T1/D
ChipFET is a trademark of Vishay Siliconix
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NTHS5445T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 8V 5.2A CHIPFET
Lifecycle:
New from this manufacturer.
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