BYV29X-600,127

BYV29X-600
Ultrafast power diode
Rev.01 - 7 November 2017 Product data sheet
1. General description
Ultrafast, epitaxial rectier diode in a SOD113 (TO-220F) plastic package.
2. Features and benets
Fast switching
Low thermal resistance
Soft recovery characteristic
Isolated package
Low forward voltage drop
High thermal cycling performance
3. Applications
Output rectiers in high frequency switched-mode power supplies
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
V
RRM
repetitive peak reverse
voltage
600 V
I
F(AV)
average forward current δ = 0.5 ; square-wave pulse; T
h
85 °C;
Fig. 1; Fig. 2; Fig. 3
9 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 85 °C;
square-wave pulse
18 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
91 A
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse 100 A
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 8 A; T
j
= 25 °C; Fig. 6 - 1.12 1.26 V
I
F
= 8 A; T
j
= 125 °C - 1.03 - V
I
F
= 8 A; T
j
= 150 °C; Fig. 6 - 0.97 1.11 V
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; Fig. 7
- 32 60 ns
WeEn Semiconductors
BYV29X-600
Ultrafast power diode
BYV29X-600
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
7
November
2017 2 / 11
5. Pinning information
6. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 K cathode
21
mb
SOD113 (2-lead TO-220F)
A
001aaa020
K
2 A anode
mb mb mounting base; isolated
Type number Package
Name Description Version
BYV29X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 ‘full pack’
SOD113
Table 3. Ordering information
7. Marking
Type number Marking codes
BYV29X-600 BYV29X-600
Table 4. Marking codes
WeEn Semiconductors
BYV29X-600
Ultrafast power diode
BYV29X-600
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
7
November
2017 3 / 11
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
V
RRM
repetitive peak reverse
voltage
600 V
V
RWM
crest working reverse
voltage
600 V
V
R
reverse voltage DC 600 V
I
F(AV)
average forward current δ = 0.5 ; square-wave pulse; T
h
≤ 85 °C;
Fig. 1; Fig. 2; Fig. 3
9 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 85 °C;
square-wave pulse
18 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
91 A
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse 100 A
T
stg
storage temperature -40 to 150 °C
T
j
junction temperature 150 °C
0246810 12 14
16
0
4
8
12
16
20
I
F(AV)
(A)
P
tot
(W)
atc14-001
δ
= 1
0.5
0.2
0.1
02468
10
0
2
4
6
8
10
12
I
F(AV)
(A)
P
tot
(W)
atc14-002
a = 1.57
1.9
2.2
2.8
4.0
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.943 V; R
s
= 0.0208 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
Vo = 0.943 V; Rs = 0.0208 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values

BYV29X-600,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers EPI
Lifecycle:
New from this manufacturer.
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