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BYV29X-600,127

P1-P3P4-P6P7-P9P10-P11
WeEn Semiconductors
BYV29X-600
Ultrafast power diode
BYV29X-600
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
7
November
2017 4 / 11
-50 050 100
150
0
2
4
6
8
10
I
F(AV)
(A)
atc14-003
85°C
T
h
(°C)
10
-5
10
-4
10
-3
10
-2
10
10
2
10
3
10
4
t
p
(s)
I
FSM
(A)
I
F
T
j(init)
= 25 °C max
I
FSM
t
p
t
atc14-004
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
WeEn Semiconductors
BYV29X-600
Ultrafast power diode
BYV29X-600
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
7
November
2017 5 / 11
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 5 - - 5.5 K/W
without heatsink compound - - 5.9 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air - 55 - K/W
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
110
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-h)
(K/W)
P
t
t
p
T
t
p
δ =
T
atc14-005
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
single pulse
δ = 0.02
δ = 0.01
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
C
isol
isolation capacitance from cathode to external heatsink - 10 - PF
WeEn Semiconductors
BYV29X-600
Ultrafast power diode
BYV29X-600
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
7
November
2017 6 / 11
11. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward current I
F
= 8 A; T
j
= 25 °C; Fig. 6 - 1.12 1.26 V
I
F
= 8 A; T
j
= 125 °C - 1.03 - V
I
F
= 8 A; T
j
= 150 °C; Fig. 6 - 0.97 1.11 V
I
R
reverse current V
R
= 600 V; T
j
= 25 °C - 2 50 μA
V
R
= 600 V; T
j
= 100 °C - 0.3 - mA
V
R
= 600 V; T
j
= 125 °C - - 3 mA
Dynamic characteristics
Q
r
reverse charge
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; Fig. 7
- 37 - nC
t
rr
reverse recovery time - 32 60 ns
I
RM
peak reverse recovery
current
- 2.3 - A
dI
rr
/dt peak rate of fall of reverse
recovery current
- 297 - A/μs
Q
r
reverse charge
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 25 °C; Fig. 7
- 220 - nC
t
rr
reverse recovery time - 43 - ns
I
RM
peak reverse recovery
current
- 10 - A
dI
rr
/dt peak rate of fall of reverse
recovery current
- 655 - A/μs
Q
r
reverse charge
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 200 A/μs;
T
j
= 25 °C; Fig. 7
- 165 - nC
t
rr
reverse recovery time - 59 - ns
I
RM
peak reverse recovery
current
- 5.6 - A
dI
rr
/dt peak rate of fall of reverse
recovery current
- 215 - A/μs
Q
r
reverse charge
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 125 °C; Fig. 7
- 425 - nC
t
rr
reverse recovery time - 57 - ns
I
RM
peak reverse recovery
current
- 15 - A
dI
rr
/dt peak rate of fall of reverse
recovery current
- 1661 - A/μs
Q
r
reverse charge
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 200 A/μs;
T
j
= 125 °C; Fig. 7
- 315 - nC
t
rr
reverse recovery time - 70 - ns
I
RM
peak reverse recovery
current
- 9 - A
dI
rr
/dt peak rate of fall of reverse
recovery current
- 1181 - A/μs
P1-P3P4-P6P7-P9P10-P11

BYV29X-600,127

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Manufacturer:
WeEn Semiconductors
Description:
Rectifiers EPI
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