PEMD30_PUMD30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 31 March 2006 3 of 11
Philips Semiconductors
PEMD30; PUMD30
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
I
O
output current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 200 mW
SOT666
[1][2]
- 200 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 300 mW
SOT666
[1][2]
- 300 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 625 K/W
SOT666
[1][2]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 416 K/W
SOT666
[1][2]
- - 416 K/W
