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VS-T85HFL80S05

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
1
Document Number: 93184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Recovery Diodes (T-Modules), 40 A, 70 A, 85 A
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
•Standard JEDEC
®
package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
PRODUCT SUMMARY
I
F(AV)
40 A, 70 A, 85 A
Type Modules - Diode, Fast
D-55 (T-module)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T40HFL T70HFL T85HFL UNITS
I
F(AV)
40 70 85 A
T
C
70 70 70 °C
I
F(RMS)
63 110 133 A
I
FSM
50 Hz 475 830 1300
A
60 Hz 500 870 1370
I
2
t
50 Hz 1130 3460 8550
A
2
s
60 Hz 1030 3160 7810
V
RRM
Range 100 to 1000 V
t
rr
Range 200 to 1000 ns
T
J
Range -40 to +125 °C
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
2
Document Number: 93184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
Note
(1)
Tested on LEM 300 A diodemeter tester
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
t
rr
CODE
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
VS_T40HFL..
VS_T70HFL..
VS_T85HFL..
10 S02, S05, S10 100 150
100
20 S02, S05, S10 200 300
40 S02, S05, S10 400 500
60 S02, S05, S10 600 700
80 S05, S10 800 900
100 S05, S10 1000 1100
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
T40HFL T70HFL T85HFL
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
40 70 85 A
70 °C
Maximum RMS forward current I
F(RMS)
63 110 133 A
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
475 830 1300
A
t = 8.3 ms 500 870 1370
t = 10 ms 100 %
V
RRM
reapplied
400 700 1100
t = 8.3 ms 420 730 1150
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1130 3460 8550
A
2
s
t = 8.3 ms 1030 3160 7810
t = 10 ms 100 %
V
RRM
reapplied
800 2450 6050
t = 8.3 ms 730 2230 5520
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A
2
s
Low level value of threshold voltage V
F(TO)1
T
J
= 25 °C, (16.7 % x x I
F(AV)
< I < x I
F(AV)
) 0.82 0.87 0.84
V
High level value of threshold
voltage
V
F(TO)2
T
J
= 25 °C, (I > x I
F(AV)
) 0.84 0.90 0.86
Low level value of forward slope
resistance
r
f1
T
J
= 25 °C, (16.7 % x x I
F(AV)
< I < x I
F(AV)
) 7.0 2.77 2.15
m
High level value of forward
slope resistance
r
f2
T
J
= 25 °C, (I > x I
F(AV)
) 6.8 2.67 2.07
Maximum forward voltage drop V
FM
I
FM
= x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
1.60 1.73 1.55 V
REVERSE RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS
(1)
T40HFL T70HFL T85HFL UNITS
S02S05S10S02S05S10S02S05S10
Maximum reverse
recovery time
t
rr
T
J
= 25 °C, -dI
F
/dt = 100 A/μs
I
F
= 1 A to V
R
= 30 V
70 110 270 70 110 270 80 120 290
ns
T
J
= 25 °C, -dI
F
/dt = 25 A/μs
I
FM
= x rated I
F(AV)
, V
R
= - 30 V
200 500 1000 200 500 1000 200 500 1000
Maximum reverse
recovery charge
Q
rr
T
J
= 25 °C, -dI
F
/dt = 100 A/μs
I
F
= 1 A to V
R
= 30 V
0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6
μC
T
J
= 25 °C, -dI
F
/dt = 25 A/μs
I
FM
= x rated I
F(AV)
, V
R
= - 30 V
0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5
VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
3
Document Number: 93184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Maximum peak reverse leakage current I
RRM
T
J
= 125 °C 20 mA
RMS isolation voltage V
ISOL
50 Hz, circuit to base, all terminals shorted,
T
J
= 25 °C, t = 1 s
3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating temperature range T
J
-40 to +125
°C
Storage temperature range T
Stg
-40 to +150
Maximum internal thermal
resistance, junction to case
per module
T40HFL
R
thJC
DC operation
0.85
K/WT70HFL 0.53
T85HFL 0.46
Thermal resistance,
case to heatsink per module
R
thCS
Mounting surface, flat,
smooth and greased
0.2
Mounting torque ± 10 %
base to heatsink
Non-lubricated
threads
M3.5 mounting screws
(1)
1.3 ± 10 %
Nm
busbar to terminal M5 screws terminals 3 ± 10 %
Approximate weight
See dimensions -
link at the end of datasheet
54 g
19 oz.
Case style D-55 (T-module)
R CONDUCTION
DEVICES SINUSOIDAL CONDUCTION AT T
J
MAXIMUM RECTANGULAR CONDUCTION AT T
J
MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24
K/WT70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19
T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015
50
60
70
80
90
100
110
120
130
0 1020304050
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
T4 0 HFL. . Se r i e s
R (DC) = 0.85 K/ W
thJC
50
60
70
80
90
100
110
120
130
0 10203040506070
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduc tion Period
Average Forward Current (A)
T4 0 HFL. . Se r i e s
R (DC) = 0.85 K/ W
thJC
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

VS-T85HFL80S05

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Buy VS-T85HFL80S05
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 800 Volt 85 Amp
Lifecycle:
New from this manufacturer.
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