VS-T40HFL, VS-T70HFL, VS-T85HFL Series
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Vishay Semiconductors
Revision: 20-Dec-16
7
Document Number: 93184
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Fig. 21 - Recovery Current Characteristics
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Current - Irr (A)
I = 300A
T4 0 HF L . . S0 2
T7 0 HF L . . S0 2
T = 1 2 5 ° C
FM
J
0.6
0.7
0.8
0.9
1
1.1
00101
100A
220A
172A
50A
Maximum Reverse Rec overy Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
FM
T4 0 HF L. . S0 5
T7 0 HF L. . S0 5
T = 1 2 5 ° C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of Forward Current - di/ d t (A/ µs)
Maximum Reverse Recovery Charge - Qrr (µC)
220A
172A
100A
50A
I = 300A
FM
T4 0 H F L. . S0 5
T7 0 H F L. . S0 5
T = 1 2 5 ° C
J
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
220A
172A
100A
50A
M aximum Reve rse Rec o ve ry Current - Irr ( A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
FM
T4 0 H FL. . S0 5
T7 0 H FL. . S0 5
T = 125 °C
J
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
00101
100A
50A
200A
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/d t (A/µs)
I = 300A
FM
T4 0 H FL. . S 1 0
T7 0 H FL. . S 1 0
T = 125 °C
J
5
10
15
20
25
30
35
40
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Re verse Re covery Cha rge - Qrr (µC)
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
I = 300A
FM
T4 0 H F L. . S1 0
T7 0 H F L. . S1 0
T = 1 2 5 ° C
J
