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PMCM6501VNEZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 August 2015 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 12 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 8 V
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - 9.6 A
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 7.3 A
I
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 4.6 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 29 A
[2] - 556 mWT
amb
= 25 °C
[1] - 1300 mW
P
tot
total power dissipation
T
sp
= 25 °C - 12500 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors
PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 August 2015 4 / 15
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Fig. 3. Normalized continuous drain current as a
function of junction temperature
aaa-016024
1
10
-1
10
10
2
I
D
(A)
10
-2
V
DS
(V)
10
-1
10
2
101
Limit R
DSon
= V
DS
/I
D
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 10 µs
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
I
DM
= single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 180 225 K/W
[2] - 65 85 K/W
in free air
[3] - 75 95 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air; t ≤ 5 s [3] - 45 55 K/W
NXP Semiconductors
PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 August 2015 5 / 15
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm
2
.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
aaa-013880
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.50
0.01
0.20
0.10
0.05
0.02
0
0.25
0.33
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013881
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
10
2
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0.75
0.50
0.33
0.25
0.20
0.10
0.05
0.02
0
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMCM6501VNEZ

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Manufacturer:
Nexperia
Description:
MOSFET 12V N-Channel Trench MOSFET
Lifecycle:
New from this manufacturer.
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