NXP Semiconductors
PMCM6501VNE
12 V, N-channel Trench MOSFET
PMCM6501VNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 August 2015 7 / 15
Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
V
SD
source-drain voltage I
S
= 1.2 A; V
GS
= 0 V; T
j
= 25 °C - 0.6 1.2 V
V
DS
(V)
0 431 2
aaa-019137
10
15
5
20
25
I
D
(A)
0
V
GS
= 1.1 V
1.3 V
1.5 V
1.8 V
2.5 V
4.5 V
T
j
= 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-019138
V
GS
(V)
0 1.51.00.5
10
-4
10
-5
10
-3
I
D
(A)
10
-6
(1) (2) (3)
T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 252010 155
aaa-019139
20
30
10
40
50
R
DSon
(mΩ)
0
V
GS
= 4.5 V
1.3 V
1.8 V
2.5 V
1.6 V
1.5 V
T
j
= 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 542 31
aaa-019140
20
30
10
40
50
R
DSon
(mΩ)
0
T
j
= 25 °C
T
j
= 150 °C
I
D
= 3 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
