DS1236A
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NON-MASKABLE INTERRUPT
The DS1236A generates a non-maskable interrupt NMI for early warning of power failure to a
microprocessor. A precision comparator monitors the voltage level at the IN pin relative to a reference
generated by the internal band gap. The IN pin is a high-impedance input allowing for a user-defined
sense point. An external resistor voltage divider network (NO TAG) is used to interface with high voltage
signals. This sense point may be derived from the regulated 5-volt supply or from a higher DC voltage
level closer to the main system power input. Since the IN trip point V
TP
is 2.54 volts, the proper values
for R1 and R2 can be determined by the equation as shown in NO TAG. Proper operation of the
DS1236A requires that the voltage at the IN pin be limited to V
IN
. Therefore, the maximum allowable
voltage at the supply being monitored (V
MAX
) can also be derived as shown in NO TAG. A simple
approach to solving this equation is to select a value for R2 high enough to keep power consumption low,
and solve for R1. The flexibility of the IN input pin allows for detection of power loss at the earliest point
in a power supply system, maximizing the amount of time for microprocessor shutdown between NMI
and RST or RST .
When the supply being monitored decays to the voltage sense point, the DS1236A pulses the NMI output
to the active state for a minimum of 200 μs. The NMI power-fail detection circuitry also has built-in time
domain hysteresis. That is, the monitored supply is sampled periodically at a rate determined by an
internal ring oscillator running at approximately 30 kHz (33 μs/cycle). Three consecutive samplings of
out-of-tolerance supply (below V
SENSE
) must occur at the IN pin to activate NMI . Therefore, the supply
must be below the voltage sense point for approximately 100 μs or the comparator will reset. In this way,
power supply noise is removed from the monitoring function, preventing false trips. During a power-up,
any detected IN pin levels be low V
TP
by the comparator are disabled from reaching the NMI pin until
V
CC
rises to V
CCTP
. As a result, any potential NMI pulse will not be initiated until V
CC
reaches V
CCTP
.
Removal of an active low level on the NMI pin is controlled by either an internal timeout (when IN pin is
less than V
TP
) or by the subsequent rise of the IN pin above V
TP
. The initiation and removal of the NMI
signal during power-up results in an NMI pulse of from 0 μs minimum to 500 μs maximum, depending
on the relative voltage relationship between V
CC
and the IN pin voltage. As an example, when the IN pin
is tied to ground during power-up, the internal timeout will result in a pulse of 200 μs minimum to 500 μs
maximum. In contrast, if the IN pin is tied to V
CCO
during power-up, NMI will not produce a pulse on
power-up. Note that a fast-slewing power supply may cause the NMI to be virtually nonexistent on
power-up. This is of no consequence, however, since an RST will be active.
DS1236A
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DS1236A FUNCTIONAL BLOCK DIAGRAM Figure 1
DS1236A
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If the IN pin is connected to V
CCO
, the NMI output will pulse low as V
CC
decays to V
CCTP
in the NMOS
mode (RC=0). In the CMOS mode (RC=V
CCO
) the power-down of V
CC
out of tolerance at V
CCTP
will not
produce a pulse on the
NMI pin. Given that any NMI pulse has been completed by the time V
CC
decays
to V
CCTP
, the NMI pin will remain high. The NMI voltage will follow V
CC
down until V
CC
decays to
V
BAT
. Once V
CC
decays to V
BAT
, the NMI pin will either remain at V
OHL
or enter tri-state mode as
determined by the RC pin (see “Reset Control” section).
MEMORY BACKUP
The DS1236A provides all of the necessary functions required to battery back a static RAM. First, a
switch is provided to direct SRAM power from the incoming 5-volt supply (V
CC
) or from an external
battery (V
BAT
), whichever is greater. This switched supply (V
CCO
) can also be used to battery back a
CMOS microprocessor. For more information about nonvolatile processor applications, review the “Reset
Control” and “Wake Control” sections. Second, the same power-fail detection described in the power
monitor section is used to hold the chip enable output (CEO ) to within 0.3 volts of V
CC
or to within 0.7
volts of V
BAT
. This write protection mechanism occurs as V
CC
falls below V
CCTP
as specified. If CEI is
low at the time power-fail detection occurs, CEO is held in its present state until CEI is returned high or
the period t
CE
expires. This delay of write protection until the current memory cycle is completed prevents
the corruption of data. If CEO is in an inactive state at the time of V
CC
-fail detection, CEO will be
unconditionally disabled within t
CF
. During nominal supply conditions CEO will follow CEI with a
maximum propagation delay of 20 ns. NO TAG shows a typical nonvolatile SRAM application. The
DS1236A unlike the DS1236 can be operated without a battery. In this method of operation the V
BAT
, pin
1, must be grounded. In general, it would also be expected to have the RC, pin 8, grounded (NMOS
mode) since no battery backup is available.
FRESHNESS SEAL
In order to conserve battery capacity during initial construction of an end system, the DS1236A provides
a freshness seal that electrically disconnects the battery. This means that upon battery attach, the V
CCO
output will remain inactive until V
CC
is applied. This prevents V
CCO
from powering other devices when
the battery is first attached, and V
CC
is not present. Once V
CC
is applied, the freshness seal is broken and
cannot be invoked again without subsequent removal and reattachment of the battery.
POWER SWITCHING
When larger operating currents are required in a battery backed system, the 5-volt supply and battery
supply switches internal to the DS1236A may not be large enough to support the required load through
V
CCO
with a reasonable voltage drop. For these applications, the PF and PF outputs are provided to gate
external power switching devices. As shown in Figure 8, power to the load is switched from V
CC
to
battery on power-down, and from battery to V
CC
on power-up. The DS1336 is designed to use the PF
output to switch between V
BAT
and V
CC
It provides better leakage and switchover performance than
currently available discrete components. The transition threshold for PF and PF is set to the external
battery voltage V
BAT
, allowing a smooth transition between sources. The load applied to the PF pin from
the external switch will be supplied by the battery. Therefore, if a discrete switch is used, this load should
be taken into consideration when sizing the battery.
RESET CONTROL
As mentioned above, the DS1236A supports two modes of operation. The CMOS mode is used when the
system incorporates a CMOS microprocessor which is battery backed. The NMOS mode is used when a
non-battery backed processor is incorporated. The mode is selected by the RC (Reset Control) pin. The
level of this pin distinguishes timing and level control on RST,
RST , and NMI outputs for volatile
processor operation versus nonvolatile battery backup or battery-operated processor applications.

DS1236AS-10

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Supervisory Circuits
Lifecycle:
New from this manufacturer.
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