Philips Semiconductors Product data
AU5790Single wire CAN transceiver
2001 May 18
7
DC CHARACTERISTICS
–40 °C < T
amb
< +125 °C; 5.5 V < V
BAT
< 16 V; –0.3 V < V
TxD
< 5.5 V; –0.3 V < V
NSTB
< 5.5 V; –0.3 V < V
EN
< 5.5 V; –0.3 V < V
RxD
< 5.5 V;
–1 V < V
CANH
< +16 V; bus load resistor at pin RTH: 2 k < R
T
< 9.2 k; total bus load resistance 270 < R
L
< 9.2 k;
C
L
< 13.7 nF; 1µs < R
L
C
L
< 4µs; RxD pull-up resistor 2.2 k < R
d
< 3.0 k; RxD: loaded with C
LR
< 30pF to GND;
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at V
BAT
= 13 V and T
amb
= 25 °C, unless otherwise specified.
SYMBOL
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pin BAT
V
BAT
Operating supply voltage Note 1 5.3 13 27 V
V
BATL
Low battery state Part functional or in undervoltage
lockout state
2.5 5.3 V
V
BATLO
Supply undervoltage lockout state TxD = 1 or 0; check CANH and
RxD are floating
2.5 V
I
BATPN
Passive state supply current in
normal mode
NSTB = 5 V, EN = 5 V, TxD = 5 V 2 mA
I
BATPW
Passive state supply current in
wake-up mode
NSTB = 0 V, EN = 5 V, TxD = 5 V,
Note 2
3 mA
I
BATPH
Passive state supply current in
high speed mode
NSTB = 5 V, EN = 0 V, TxD = 5 V,
Note 2
4 mA
I
BATN
Active state supply current in
normal mode
NSTB = 5 V, EN = 5 V, TxD = 0 V,
R
L
= 270 Ω, T
amb
= 125 °C
35 mA
T
amb
= 25 °C, –40 °C 40 mA
I
BATW
Active state supply current in
wake-up mode
NSTB = 0 V, EN = 5 V, TxD = 0 V,
R
L
= 270 , Note 2,
T
amb
= 125 °C
70 mA
T
amb
= 25 °C, –40 °C, Note 2 90 mA
I
BATH
Active state supply current in
high speed mode
NSTB = 5 V, EN = 0 V, TxD = 0 V,
R
L
= 100 , Note 2,
T
amb
= 125 °C
70 mA
T
amb
= 25 °C, –40 °C, Note 2 85 mA
I
BATS
Sleep mode supply current NSTB = 0 V, EN = 0 V, TxD = 5 V,
RxD = 5 V, –1 V < V
CANH
< +1 V,
5.5 V < V
BAT
< 14 V
–40 °C < T
j
< 125 °C
70 100 µA
Pin CANH
V
CANHN
Bus output voltage in normal
mode
NSTB = 5 V, EN = 5 V,
R
L
> 270; 5.5 V < V
BAT
< 27 V
3.65 4.1 4.55 V
V
CANHW
Bus output voltage in wake-up
mode
NSTB = 0 V, EN = 5 V,
R
L
> 270; 11.3 V < V
BAT
< 16 V
9.80 min
(V
BAT
, 13)
V
V
CANHWL
Bus output voltage in wake-up
mode, low battery
NSTB = 0 V, EN = 5 V,
R
L
> 270; 5.5 V < V
BAT
< 11.3 V
V
BAT
1.45
V
BAT
V
V
CANHH
Bus output voltage in high-speed
transmission mode
NSTB = 5 V, EN = 0 V,
R
L
> 100; 8 V < V
BAT
< 16 V
3.65 4.55 V
I
CANHRR
Recessive state output current,
bus recessive
Recessive state or sleep mode,
V
CANH
= –1 V; 0 V < V
BAT
< 27 V
–10 10 µA
I
CANHRD
Recessive state output current,
bus dominant
Recessive state or sleep mode,
V
CANH
= 10 V; 0 V < V
BAT
< 16 V
–20 100 µA
I
CANHDD
Dominant state output current,
bus dominant
TxD = 0 V, normal mode,
high-speed mode and sleep mode;
V
CANH
= 10 V;
0 V < V
BAT
< 16 V
–20 100 µA
–I
CANH_N
Bus short circuit current,
normal mode
V
CANH
= –1 V,
TxD = 0 V; NSTB = 5 V; EN = 5 V
30 150 mA
–I
CANHW
Bus short circuit current,
wake-up mode
V
CANH
= –1 V,
TxD = 0 V; NSTB = 0 V; EN = 5 V
60 190 mA
Philips Semiconductors Product data
AU5790Single wire CAN transceiver
2001 May 18
8
SYMBOL UNITMAX.TYP.MIN.CONDITIONSPARAMETER
Pin CANH (continued)
–I
CANHH
Bus short circuit current in
high-speed mode
V
CANH
= –1 V,
TxD = 0 V; NSTB = 5 V; EN = 0 V;
8 V < V
BAT
< 16 V
50 190 mA
I
CANLG
Bus leakage current at loss of
ground
(I_CAN_LG = I_CANH + I_RTH)
0 V < V
BAT
< 16 V;
see Figure 3 in the test circuits
section
–50 50 µA
T
sd
Thermal shutdown Note 2 155 190 °C
T
hys
Thermal shutdown hysteresis Note 2 5 15 °C
V
T
Bus input threshold 5.8 V < V
BAT
< 27 V,
all modes except sleep mode
1.8 2.2 V
V
TL
Bus input threshold, low battery 5.5 V < V
BAT
< 5.8 V,
all modes except sleep mode
1.5 2.2 V
V
TS
Bus input threshold in sleep mode NSTB = 0 V, EN = 0 V,
V
BAT
> 11.3 V
6.15 8.1 V
V
TSL
Bus input threshold in sleep mode,
low battery
NSTB = 0 V, EN = 0 V,
5.5 V < V
BAT
< 11.3 V
V
BAT
– 4.3 V
BAT
– 3.25 V
Pin RTH
V
RTH1
Voltage on switched ground pin I
RTH
= 1 mA 0.1 V
V
RTH2
Voltage on switched ground pin I
RTH
= 6 mA 1 V
Pins NSTB, EN
V
ih
High level input voltage 5.5 V < V
BAT
< 27 V 3 V
V
il
Low level input voltage 5.5 V < V
BAT
< 27 V 1 V
I
i
Input current V
i
= 1 V and V
i
= 5 V 15 50 µA
Pin TxD
V
itxd
TxD input threshold 5.5 V < V
BAT
< 27 V 1 3 V
–I
iltxd
TxD low level input current in
normal mode
NSTB = 5 V, EN = 5 V, V
TxD
= 0 V 50 180 µA
–I
ihtxd
TxD high level input current in
sleep mode
NSTB = 0 V, EN = 0 V, V
TxD
= 5 V –5 10 µA
Pin RxD
V
olrxd
RxD low level output voltage I
RxD
= 2.2 mA;
V
CANH
= 10 V, all modes
0.45 V
I
olrxd
RxD low level output current V
RxD
= 5 V; V
CANH
= 10 V 3 35 mA
I
ohrxd
RxD high level leakage V
RxD
= 5 V; V
CANH
= 0 V,
all modes
–10 +10 µA
NOTES:
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < V
BAT
< 27 V) for up to two
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, T
sd
, otherwise the device
will self protect. Typically these requirements will be encountered during jump start operation at T
amb
85 °C and V
BAT
< 27 V. Refer to the
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.
2. This parameter is characterized but not subject to production test.
Philips Semiconductors Product data
AU5790Single wire CAN transceiver
2001 May 18
9
Dynamic (AC) CHARACTERISTICS for 33 kbps operation
–40 °C < T
amb
< +125 °C; 5.5 V < V
BAT
< 16 V; –0.3 V < V
TxD
< 5.5 V; –0.3 V < V
NSTB
< 5.5 V; –0.3 V < V
EN
< 5.5 V; –0.3 V < V
RxD
< 5.5 V;
–1 V < V
CANH
< +16 V; bus load resistor at pin RTH: 2 k < R
T
< 9.2 k; total bus load resistance 270 < R
L
< 9.2 k;
C
L
< 13.7 nF; 1µs < R
L
C
L
< 4µs; RxD pull-up resistor 2.2 k < R
d
< 3.0 k; RxD: loaded with C
LR
< 30pF to GND;
all voltages are referenced to pin 8 (GND); positive currents flow into the IC;
typical values reflect the approximate average value at V
BAT
= 13 V and T
amb
= 25 °C, unless otherwise specified.
SYMBOL
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pin CANH
V
dBAMN
CANH harmonic content in
normal mode
NSTB = 5 V, EN = 5 V;
R
L
= 270 , C
L
= 15 nF;
f
TxD
= 20 kHz, 50% duty cycle;
8 V < V
BAT
< 16 V;
0.53 MHz < f < 1.7 MHz, Note 2
70 dBµV
V
dBAMW
CANH harmonic content in
wake-up mode
NSTB = 5 V, EN = 0 V;
R
L
= 270 , C
L
= 15 nF;
f
TxD
= 20 kHz, 50% duty cycle;
8 V < V
BAT
< 16 V;
0.53 MHz < f < 1.7 MHz, Note 2
80 dBµV
Pins NSTB, EN
t
NH
Normal mode to high-speed mode
delay
30 µs
t
HN
High-speed mode to normal mode
delay
30 µs
t
WN
Wake-up mode to normal mode
delay
8 V < V
BAT
< 16 V 30 µs
t
NS
Normal mode to sleep mode delay 500 µs
t
SN
Sleep mode to normal mode delay 50 µs
Pin TxD
t
TrN
Transmit delay in normal mode,
bus rising edge
NSTB = 5 V, EN = 5 V;
R
L
= 270 , C
L
= 15 nF;
5.5 V < V
BAT
< 27 V;
measured from the falling edge on
TxD to V
CANH
= 3.0 V
3 6.3 µs
t
TfN
Transmit delay in normal mode,
bus falling edge
NSTB = 5 V, EN = 5 V;
R
L
= 270 , C
L
= 15 nF;
5.5 V < V
BAT
< 27 V;
measured from the rising edge on
TxD to V
CANH
= 1.0 V
3 9 µs
t
TrW
Transmit delay in wake-up mode,
bus rising edge to normal levels
NSTB = 0 V, EN = 5 V;
R
L
= 270 , C
L
= 15 nF;
5.5 V < V
BAT
< 27 V;
measured from the falling edge on
TxD to V
CANH
= 3.0 V
3 6.3 µs
t
TrW-S
Transmit delay in wake-up mode,
bus rising edge to wake-up level
NSTB = 0 V, EN = 5 V;
R
L
= 270 , C
L
= 15 nF;
11.3 V < V
BAT
< 27 V;
measured from the falling edge on
TxD to V
CANH
= 8.9 V
3 18 µs
t
TfW-3.6
Transmit delay in wake-up mode,
bus falling edge with 3.6 µs time
constant
NSTB = 0 V, EN = 5 V;
R
L
= 270 , C
L
= 13.3 nF;
5.5 V < V
BAT
< 27 V;
measured from the rising edge on
TxD to V
CANH
= 1 V, Note 2
3 12.7 µs
t
TfW-4.0
Transmit delay in wake-up mode,
bus falling edge with 4.0 µs time
constant
NSTB = 0 V, EN = 5 V;
R
L
= 270 , C
L
= 15 nF;
5.5 V < V
BAT
< 27 V;
measured from the rising edge on
TxD to V
CANH
= 1 V
3 13.7 µs

AU5790D,118

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC CAN TXRX SINGLE WIRE 8SOIC
Lifecycle:
New from this manufacturer.
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