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BSG0810NDIATMA1

P1-P3P4-P6P7-P9P10-P12P13-P14
BSG0810NDI
Power Block
Features
• Dual asymmetric N-channel OptiMOS™5 MOSFET
• Logic level (4.5V rated)
• Pb-free lead plating; RoHS compliant
• Optimized for high performance Buck converter
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
• Monolithic integrated Schottky like diode
Maximum ratings, at T
j
=25°C, unless otherwise specified
2)
Parameter Symbol Conditions Unit
Q1 Q2
Continuous drain current
I
D
T
C
=70 °C, V
GS
=10 V
50 50 A
T
C
=70 °C, V
GS
=4.5 V
50 50
T
A
=25 °C,
V
GS
=4.5 V
3)
31 50
T
A
=25 °C,
V
GS
=4.5 V
4)
19 39
Pulsed drain current
I
D,pulse
T
C
=70 °C
160 160
Avalanche energy, single pulse
E
AS
Q1: I
D
=10 A,
Q2: I
D
=20 A,
R
GS
=25 W
30 90 mJ
Gate source voltage
V
GS
T
j
=25 °C
V
Power dissipation
P
tot
T
A
=25 °C
3)
6.25 6.25 W
T
A
=25 °C
4)
2.5 2.5
Operating and storage temperature
T
j
, T
stg
°C
IEC climatic category; DIN IEC 68-1
Value
-55 ... 150
55/150/56
±16
1)
J-STD20 and JESD22
Type
Package
Marking
BSG0810NDI
0810NDI
D1 (Vin)
S1 (VPhase)
D1 (Vin)
G1 (GHS)
S1/D2 (VPhase)
G2 (GLS)
S1/D2 (VPhase)
S1/D2 (VPhase)
S2 (GND)
Q1
Top view
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(10)
(9)
Q2
Q1
Q2
V
DS
25
25
V
V
GS
=10 V
3
0.85
V
GS
=4.5 V
4
1.2
I
D
50
50
A
Rev.2.1 page 1 2016-03-08
BSG0810NDI
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Q1
R
thJC
- - 4.3 K/W
Q2 - - 1.8
Q1
R
thJA
Q2
Q1
Q2
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Q1
Q2
Q1
Q2
Gate threshold voltage Q1
Q2
Zero gate voltage drain current Q1
I
DSS
- - 1 µA
Q2 - - 500
Q1 - - 100
Q2 - 3 - mA
Gate-source leakage current Q1
I
GSS
Q2
Q1
R
DS(on)
- 3.2 4.0
mW
Q2 - 1.0 1.1
Q1 - 2.4 3.0
Q2 - 0.7 0.9
Gate resistance Q1
R
G
- 0.7 1.2
W
Q2 - 0.8 1.3
Transconductance Q1
g
fs
47 94 - S
Q2 55 110 -
V
GS
=4.5 V, I
D
=20 A
V
GS
=10 V, I
D
=20 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=20 A
V
DS
=20 V, V
GS
=0 V,
T
j
=125 °C
nA
-
V
GS
=16 V, V
DS
=0 V
-
Values
15
V
DS
=25 V, V
GS
=0 V,
T
j
=25 °C
2)
Remark: only one of both transistors active
Drain-source on-state
resistance
Thermal resistance, junction -
ambient
2)
Application specific
board
3)
100
-
-
2
1.2
-
-
-
Breakdown voltage temperature
coefficient
dV
(BR)DSS
/dT
j
I
D
=10 mA, referenced
to 25 °C
-
Thermal resistance, junction -
case
1.6
25
6)
V
-
mV/K
6 cm
2
cooling area
4)
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
V
GS(th)
V
V
DS
=V
GS
, I
D
=250 µA
20
50
-
Rev.2.1 page 2 2016-03-08
BSG0810NDI
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Q1
C
iss
- 770 1040 pF
Q2 - 2300 3100
Output capacitance Q1
C
oss
- 390 520
Q2 - 1400 1900
Reverse transfer capacitance Q1
C
rss
- 33 -
Q2 - 110 -
Turn-on delay time Q1
t
d(on)
- 4.3 ns
Q2 - 5.1 -
Rise time Q1
t
r
- 4.7 -
Q2 - 4.0 -
Turn-off delay time Q1
t
d(off)
- 4.3 -
Q2 - 8 -
Fall time Q1
t
f
- 1.4 -
Q2 - 2.4 -
Gate Charge Characteristics
Gate to source charge Q1
Q
gs
- 2.2 - nC
Gate to drain charge
Q
gd
- 1.6 -
Gate charge total
Q
g
- 5.6 8.4
Gate plateau voltage
V
plateau
- 2.9 - V
Gate to source charge Q2
Q
gs
- 5.9 - nC
Gate to drain charge
Q
gd
- 4.2 -
Gate charge total
Q
g
- 16 25
Gate plateau voltage
V
plateau
- 2.6 - V
Output charge Q1
Q
oss
- 8 - nC
Q2 - 26 -
3)
8 Layers copper 70μm thickness. PCB in still air
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Values
V
GS
=0 V,
V
DS
= 12 V, f =1 MHz
V
IN
=12 V,
V
DRV
=5 V,
F
SW
=500 KHz,
I
OUT
=30 A
5)
V
DD
=12 V,
I
D
=20 A,
V
GS
=0 to 4.5 V
V
DD
=12 V, V
GS
=0 V
Rev.2.1 page 3 2016-03-08
P1-P3P4-P6P7-P9P10-P12P13-P14

BSG0810NDIATMA1

Mfr. #:
Buy BSG0810NDIATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LV POWER MOS
Lifecycle:
New from this manufacturer.
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