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BSG0810NDIATMA1

P1-P3P4-P6P7-P9P10-P12P13-P14
BSG0810NDI
9 Typ. output characteristics (Q1) 10 Typ. output characteristics (Q2)
I
D
=f(V
DS
); T
j
=25 °C I
D
=f(V
DS
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2)
R
DS(on)
=f(I
D
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
100
200
300
400
0 1 2 3
I
D
[A]
V
DS
[V]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
40
80
120
160
0 1 2 3
I
D
[A]
V
DS
[V]
3 V
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
0.5
1
1.5
2
0 20 40 60 80
R
DS(on)
[mW]
I
D
[A]
3.3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
2
4
6
8
10
0 20 40 60 80
R
DS(on)
[mW]
I
D
[A]
Rev.2.1 page 7 2016-03-08
BSG0810NDI
13 Typ. transfer characteristics (Q1) 14 Typ. transfer characteristics (Q2)
I
D
=f(V
GS
); |V
DS
|>2 | I
D
| R
DS(on)max
I
D
=f(V
GS
); |V
DS
|>2 | I
D
| R
DS(on)max
parameter: T
j
parameter: T
j
15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2)
R
DS(on)
=f(T
j
); I
D
=20 A; V
GS
=10 V R
DS(on)
=f(T
j
); I
D
=20 A; V
GS
=10 V
25 °C
150 °C
0
100
200
300
400
0 1 2 3 4
I
D
[A]
V
GS
[V]
25 °C
150 °C
0
40
80
120
160
0 1 2 3 4
I
D
[A]
V
GS
[V]
typ
0
1
2
3
4
5
6
7
-60 -20 20 60 100 140 180
R
DS(on)
[mW]
T
j
[°C]
typ
0
0.5
1
1.5
2
-60 -20 20 60 100 140 180
R
DS(on)
[mW]
T
j
[°C]
Rev.2.1 page 8 2016-03-08
BSG0810NDI
17 Typ. gate threshold voltage (Q1) 18 Typ. gate threshold voltage (Q2)
V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=250 µA V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=10 mA
19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2)
C =f(V
DS
); V
GS
=0 V; f =1 MHz C =f(V
DS
); V
GS
=0 V; f =1 MHz
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
10
4
0 5 10 15 20 25
C [pF]
V
DS
[V]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
0 5 10 15 20 25
C [pF]
V
DS
[V]
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Rev.2.1 page 9 2016-03-08
P1-P3P4-P6P7-P9P10-P12P13-P14

BSG0810NDIATMA1

Mfr. #:
Buy BSG0810NDIATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LV POWER MOS
Lifecycle:
New from this manufacturer.
Delivery:
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