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SUD35N10-26P-GE3

P1-P3P4-P6P7-P9
SUD35N10-26P
www.vishay.com
Vishay Siliconix
S15-1599-Rev. B, 06-Jul-15
4
Document Number: 69796
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
T
J
=25 °C
1
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.00
0.02
0.04
0.06
0.08
45678910
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
=25 °C
T
A
= 125 °C
I
D
=12A
0
50
100
150
200
Power (W)
Time (s)
10 10000.10.010.001 1001
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
=25 °C
Single Pulse
10 ms
100 ms
DC
1s
10 s
Limited by R
DS(on)
*
1ms
BVDSS
Limited
100 µs
SUD35N10-26P
www.vishay.com
Vishay Siliconix
S15-1599-Rev. B, 06-Jul-15
5
Document Number: 69796
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
10
20
30
40
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0
20
40
60
80
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
SUD35N10-26P
www.vishay.com
Vishay Siliconix
S15-1599-Rev. B, 06-Jul-15
6
Document Number: 69796
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69796
.
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 40 °C/W
3. T
JM
- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
P1-P3P4-P6P7-P9

SUD35N10-26P-GE3

Mfr. #:
Buy SUD35N10-26P-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V 35A 83W 26mohm @ 10V
Lifecycle:
New from this manufacturer.
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