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BYC8X-600P,127

P1-P3P4-P6P7-P9P10-P12
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
F
BYC8X-600P
Hyperfast power diode
3 August 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
Fast switching
•
Isolated plastic package
•
Low leakage current
•
Low reverse recovery current
•
Low thermal resistance
•
Reduces switching losses in associated MOSFET
3. Applications
•
Continuous Current Mode (CCM) Power Factor Correction (PFC)
•
Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 600 V
I
F(AV)
average forward
current
δ = 0.5 ; T
h
≤ 75 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- - 8 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 75 °C; square-
wave pulse
- - 16 A
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- - 91 AI
FSM
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- - 100 A
Static characteristics
I
F
= 8 A; T
j
= 25 °C; Fig. 6 - - 3.4 V
I
F
= 8 A; T
j
= 125 °C; Fig. 6 - 1.5 1.9 V
V
F
forward voltage
I
F
= 8 A; T
j
= 150 °C - 1.4 - V
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
BYC8X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 3 August 2015 2 / 11
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C; Fig. 7
- 12 18 nst
rr
reverse recovery time
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C; Fig. 7
- 19 - ns
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb n.c. mounting base; isolated
21
mb
TO-220F (SOD113)
A
001aaa020
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYC8X-600P TO-220F plastic single-ended package; isolated heatsink
mounted; 1 mounting hole; 2-lead TO-220 "full pack"
SOD113
7. Marking
Table 4. Marking codes
Type number Marking code
BYC8X-600P BYC8X-600P
P1-P3P4-P6P7-P9P10-P12

BYC8X-600P,127

Mfr. #:
Buy BYC8X-600P,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Hyperfast power Diode
Lifecycle:
New from this manufacturer.
Delivery:
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