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BYC8X-600P,127

P1-P3P4-P6P7-P9P10-P12
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
BYC8X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 3 August 2015 6 / 11
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
F
= 8 A; T
j
= 25 °C; Fig. 6 - - 3.4 V
I
F
= 8 A; T
j
= 125 °C; Fig. 6 - 1.5 1.9 V
V
F
forward voltage
I
F
= 8 A; T
j
= 150 °C - 1.4 - V
V
R
= 600 V; T
j
= 25 °C - - 20 µAI
R
reverse current
V
R
= 600 V; T
j
= 125 °C - - 200 µA
Dynamic characteristics
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C; Fig. 7
- 17 - nCQ
r
recovered charge
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 125 °C; Fig. 7
- 90 - nC
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C; Fig. 7
- 12 18 nst
rr
reverse recovery time
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C; Fig. 7
- 19 - ns
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C; Fig. 7
- - 2.2 AI
RM
peak reverse recovery
current
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 125 °C; Fig. 7
- - 6 A
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
BYC8X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 3 August 2015 7 / 11
Fig. 6. Forward current as a function of forward
voltage
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
Fig. 7. Reverse recovery definitions; ramp recovery
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
BYC8X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 3 August 2015 8 / 11
12. Package outline
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOD113
2-lead TO-220F
sod113_po
07-06-08
15-08-28
Unit
mm
max
nom
min
4.6 2.9 1.1 0.7 15.8 10.3
19.0
3.2 2.6
A
Dimensions (mm are the original dimensions)
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 `full pack'
SOD113
A
1
b
0.9
b
1
c D E
2.55 0.4
0.8
T
(4)
w z
(2)
e
5.08
H
E
max
j
(3)
k
(3)
L L
1
(1)
L
2
max
m
6.5
0.5
P Q
2.6
1.7 13.50.4 2.84.0 2.5 0.9 0.4 15.2 9.7 3.0 2.30.7 6.3
2.7 14.40.6 3.3
q
w
0 5 10 mm
scale
A
A
1
c
Q
k
(3)
j
(3)
m
z
(2)
e
1 2
b
E
P
b
1
q
D
T
(4)
H
E
L
L
1
(1)
L
2
Fig. 8. Package outline TO-220F (SOD113)
P1-P3P4-P6P7-P9P10-P12

BYC8X-600P,127

Mfr. #:
Buy BYC8X-600P,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Hyperfast power Diode
Lifecycle:
New from this manufacturer.
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