1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 31.1 dB at 500 MHz
Output power at 1 dB gain compression = 4 dBm
Supply current = 16.0 mA at a supply voltage of 2.5 V
Reverse isolation > 52 dB up to 750 MHz
Good linearity with low second order and third order products
Noise figure = 3.2 dB at 500 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 750 MHz
2. Pinning information
BGA2870
MMIC wideband amplifier
Rev. 3 — 13 July 2015 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym052
1
3
2, 5
6
4
BGA2870 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 2 of 18
NXP Semiconductors
BGA2870
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BGA2870 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2870 YC* * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 3.6 V
I
CC
supply current - 55 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - +10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 2.5 V; Z
S
= Z
L
= 50
; P
i
=
30 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.3 2.5 2.7 V
I
CC
supply current 13.5 16.0 17.1 mA
BGA2870 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 3 of 18
NXP Semiconductors
BGA2870
MMIC wideband amplifier
G
p
power gain f = 250 MHz 30.6 31.2 31.8 dB
f = 500 MHz 30.5 31.1 31.7 dB
f = 750 MHz 30.3 31.0 31.7 dB
RL
in
input return loss f = 250 MHz 25 27 29 dB
f = 500 MHz 202224dB
f = 750 MHz 151618dB
RL
out
output return loss f = 250 MHz 12 17 21 dB
f = 500 MHz 121721dB
f = 750 MHz 141516dB
ISL isolation f = 250 MHz 50 70 91 dB
f = 500 MHz 406080dB
f = 750 MHz 51 52 105 dB
NF noise figure f = 250 MHz 2.6 3.1 3.6 dB
f = 500 MHz 2.8 3.2 3.7 dB
f = 750 MHz 3.3 3.7 4.1 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 1.9 2.1 2.3 GHz
K Rollett stability factor f = 250 MHz 29 44 60
f = 500 MHz 9 14 18
f = 750 MHz 5 6 7
P
L(sat)
saturated output power f = 250 MHz 5 5 6 dBm
f = 500 MHz 4 4 5 dBm
f = 750 MHz 3 4 5 dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 4 5 5 dBm
f = 500 MHz 3 4 5 dBm
f = 750 MHz 2 4 5 dBm
IP3
I
input third-order intercept point P
drive
= 35 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 18 16 14 dBm
f
1
= 500 MHz; f
2
= 501 MHz 19 17 15 dBm
f
1
= 750 MHz; f
2
= 751 MHz 20 18 16 dBm
IP3
O
output third-order intercept point P
drive
= 35 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 131517dBm
f
1
= 500 MHz; f
2
=501MHz 121416dBm
f
1
= 750 MHz; f
2
= 751 MHz 11 13 15 dBm
P
L(2H)
second harmonic output power P
drive
= 35 dBm
f
1H
= 250 MHz; f
2H
=500MHz 38 36 34 dBm
f
1H
= 500 MHz; f
2H
=1900MHz 38 36 34 dBm
IM2 second-order intermodulation distance P
drive
= 35 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 252729dBc
f
1
= 500 MHz; f
2
=501MHz 222426dBc
Table 6. Characteristics
…continued
V
CC
= 2.5 V; Z
S
= Z
L
= 50
; P
i
=
30 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2870,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier MMIC wideband amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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