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BGA2870,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
BGA2870 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 10 of 18
NXP Semiconductors
BGA2870
MMIC wideband amplifier
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 25 85
P
i(1dB)
input power at 1 dB gain compression f = 250 MHz
V
CC
=2.3V 27 26 26 dBm
V
CC
=2.5V 26 26 26 dBm
V
CC
=2.7V 26 25 25 dBm
f = 500 MHz
V
CC
=2.3V 27 26 27 dBm
V
CC
=2.5V 27 26 26 dBm
V
CC
=2.7V 27 26 26 dBm
f = 750 MHz
V
CC
=2.3V 27 26 27 dBm
V
CC
=2.5V 27 27 27 dBm
V
CC
=2.7V 27 26 27 dBm
Table 10. Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 25 85
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
V
CC
=2.3V 3 3 3 dBm
V
CC
=2.5V 4 5 4 dBm
V
CC
=2.7V 6 6 5 dBm
f = 500 MHz
V
CC
=2.3V 2 3 2 dBm
V
CC
=2.5V 4 4 3 dBm
V
CC
=2.7V 5 5 4 dBm
f = 750 MHz
V
CC
=2.3V 2 2 1 dBm
V
CC
=2.5V 4 4 2 dBm
V
CC
=2.7V 5 4 3 dBm
BGA2870 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 11 of 18
NXP Semiconductors
BGA2870
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 25 85
P
L(sat)
saturated output power f = 250 MHz
V
CC
=2.3V 444dBm
V
CC
=2.5V 555dBm
V
CC
=2.7V 666dBm
f = 500 MHz
V
CC
=2.3V 333dBm
V
CC
=2.5V 444dBm
V
CC
=2.7V 555dBm
f = 750 MHz
V
CC
=2.3V 332dBm
V
CC
=2.5V 443dBm
V
CC
=2.7V 554dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 25 85
IM2 second-order intermodulation distance f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
= 35 dBm
V
CC
=2.3V 31 2725dBc
V
CC
=2.5V 29 2725dBc
V
CC
=2.7V 29 2826dBc
f
1
= 500 MHz;
f
2
= 501 MHz;
P
drive
= 35 dBm
V
CC
=2.3V 27 2523dBc
V
CC
=2.5V 26 2422dBc
V
CC
=2.7V 25 2422dBc
BGA2870 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 12 of 18
NXP Semiconductors
BGA2870
MMIC wideband amplifier
Table 13. Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 25 85
IP3
O
output third-order intercept point f
1
=250MHz;
f
2
=251MHz;
P
drive
= 38 dBm
V
CC
=2.3V 13 13 13 dBm
V
CC
=2.5V 15 15 15 dBm
V
CC
=2.7V 17 16 16 dBm
f
1
=500MHz;
f
2
=501MHz;
P
drive
= 38 dBm
V
CC
=2.3V 13 13 12 dBm
V
CC
=2.5V 15 14 13 dBm
V
CC
=2.7V 16 15 14 dBm
f
1
=750MHz;
f
2
=751MHz;
P
drive
= 38 dBm
V
CC
=2.3V 13 12 11 dBm
V
CC
=2.5V 14 13 11 dBm
V
CC
=2.7V 15 14 12 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 25 85
B
3dB
3 dB bandwidth V
CC
= 2.3 V 2.19 2.09 1.96 GHz
V
CC
= 2.5 V 2.12 2.05 1.91 GHz
V
CC
= 2.7 V 2.07 2.00 1.87 GHz
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BGA2870,115

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Manufacturer:
NXP Semiconductors
Description:
RF Amplifier MMIC wideband amp
Lifecycle:
New from this manufacturer.
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