MPC17517DTBR2 Datasheet MPC17517DTBR2 | P4-P6

Analog Integrated Circuit Device Data

4 Freescale Semiconductor

17517

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Table 2. Maximum Ratings

All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or

permanent damage to the device.

Ratings Symbol Value Unit

ELECTRICAL RATINGS

Motor Supply Voltage

V

M

-0.5 to 8.0 V

Charge Pump Output Voltage

V

CRES -0.5 to 14 V

Logic Supply Voltage

V

DD

-0.5 to 7.0 V

Signal Input Voltage

V

IN

-0.5 to V

DD

+ 0.5 V

Driver Output Current

Continuous

Peak

(1)

I

O

I

OPK

1.0

3.0

A

ESD Voltage

(2)

Human Body Model

Machine Model

V

ESD1

V

ESD2

± 2000

± 100

V

THERMAL RATINGS

Storage Temperature Range

T

STG

-65 to 150 °C

Operating Junction Temperature

T

J

-20 to 150 °C

Operating Ambient Temperature

T

A

-20 to 65 °C

Thermal Resistance

(3)

R

θ

JA

190 °C/W

Power Dissipation

(4)

P

D

657 mW

Soldering Temperature

(5)

T

SOLDER

245 °C

Notes

1. T

A

= 25°C, 10 ms pulse width at 200 ms intervals.

2. ESD1 testing is performed in accordance with the Human Body Model (C

ZAP

= 100 pF, R

ZAP

= 1500 Ω), ESD2 testing is performed in

accordance with the Machine Model (C

ZAP

= 200 pF, R

ZAP

= 0 Ω).

3. 37 mm x 50 mm Cu area (1.6 mm FR-4 PCB).

4. Maximum at T

A

= 25°C.

5. Soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may

cause malfunction or permanent damage to the device.

Analog Integrated Circuit Device Data

Freescale Semiconductor 5

17517

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics

Characteristics noted under conditions T

A

= 25°C, V

DD

= V

M

= 5.0 V, GND = 0 V unless otherwise noted. Typical values noted

reflect the approximate parameter means at T

A

= 25°C under nominal conditions unless otherwise noted.

Characteristic Symbol Min Typ Max Unit

POWER

Motor Supply Voltage

V

M

2.0 5.0 6.8 V

Logic Supply Voltage

V

DD

2.7 5.0 5.7 V

Capacitor for Charge Pump

C1, C2, C3 0.01 0.1 1.0 µF

Standby Power Supply Current

Motor Supply Standby Current

Logic Supply Standby Current

(6)

I

V

MSTBY

I

V

DDSTBY

–

1.0

µA

mA

Operating Power Supply Current

Logic Supply Current

(7)

Charge Pump Circuit Supply Current

I

V

DD

I

C

RES

–

3.0

0.7

mA

Low-Voltage Detection Circuit

Detection Voltage (V

DD

)

(8)

V

DD

DET

1.5 2.0 2.5

V

Driver Output ON Resistance

(9)

R

DS(ON)

– 0.46 0.60 W

GATE DRIVE

Gate Drive Voltage

(10)

No Current Load

V

C

RES

12 13 13.5

V

Gate Drive Ability (Internally Supplied)

I

C

RES

= -1.0 mA

V

C

RESLOAD

10 11.2 –

V

CONTROL LOGIC

Logic Input Voltage

V

IN

0 – V

DD

V

Logic Input Function (2.7 V < V

DD

< 5.7 V)

High-Level Input Voltage

Low-Level Input Voltage

High-Level Input Current

Low-Level Input Current

V

IH

V

IL

I

IH

I

IL

V

DD

x 0.7

–

-1.0

–

V

DD

x 0.3

1.0

–

V

µA

Notes

6.

I

V

DDSTBY

includes current to the predriver circuit.

7.

I

V

DD

includes current to the predriver circuit.

8. Detection voltage is defined as when the output becomes high-impedance after V

DD

drops below the detection threshold. When the gate

voltage

V

CRES is applied from an external source,

V

CRES = 7.5 V.

9. I

O

= 1.0 A source + sink.

10. Input logic signal not present.

Analog Integrated Circuit Device Data

6 Freescale Semiconductor

17517

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions T

A

= 25°C, V

DD

= V

M

= 5.0 V, GND = 0 V unless otherwise noted. Typical values noted

reflect the approximate parameter means at T

A

= 25°C under nominal conditions unless otherwise noted.

Characteristic Symbol Min Typ Max Unit

INPUT (IN1, IN2, EN1, EN2)

Pulse Input Frequency

f

IN

– – 200 kHz

Input Pulse Rise Time

(11)

t

R

– – 1.0

(12)

µs

Input Pulse Fall Time

(13)

t

F

– – 1.0

(12)

µs

OUTPUT

Propagation Delay Time

Turn-ON Time

Turn-OFF Time

t

PLH

t

PHL

–

0.1

0.5

µs

Charge Pump Wake-Up Time

(14)

t

VGON

– 0.1 3.0 ms

Low-Voltage Detection Time

t

V

DD

DET – – 10 ms

Notes

11. Time is defined between 10% and 90%.

12. That is, the input waveform slope must be steeper than this.

13. Time is defined between 90% and 10%.

14. When C1 = C2 = C3 = 0.1 µF.

MPC17517DTBR2

MPC17517DTBR2

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