VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Feb-14
1
Document Number: 94946
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 8 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
8 A
V
R
80 V, 100 V
V
F
at I
F
0.58 V
I
RM
7 mA at 125 °C
T
J
max. 175 °C
E
AS
7.5 mJ
Package TO-263AB (D
2
PAK)
Diode variation Single die
D
2
PAK
Anode
1
3
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 8 A
V
RRM
Range 80/100 V
I
FSM
t
p
= 5 μs sine 850 A
V
F
8 A
pk
, T
J
= 125 °C 0.58 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-8TQ080S-M3 VS-8TQ100S-M3 UNITS
Maximum DC reverse voltage V
R
80 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 157 °C, rectangular waveform 8 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
850
A
10 ms sine or 6 ms rect. pulse 230
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.50 A