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VS-8TQ100STRR-M3

P1-P3P4-P6P7-P7
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Feb-14
4
Document Number: 94946
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
150
155
140
145
160
165
170
180
175
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
4268
1210
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
0
1
3
6
5
4
2
7
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
24
126810
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100 1000
10 000
10
At any rated load condition
and with rated V
RRM
applied
following surge
Current
monitor
High-speed
switch
D.U.T.
R
g
= 25 Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Feb-14
5
Document Number: 94946
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8TQ080S-M3 50 1000 Antistatic plastic tubes
VS-8TQ080STRR-M3 800 800 13" diameter reel
VS-8TQ080STRL-M3 800 800 13" diameter reel
VS-8TQ100S-M3 50 1000 Antistatic plastic tubes
VS-8TQ100STRR-M3 800 800 13" diameter reel
VS-8TQ100STRL-M3 800 800 13" diameter reel
080 = 80 V
100 = 100 V
2 - Current rating (8 A)
3
- Circuit configuration: T = TO-220
4 - Schottky “Q” series
5 - Voltage ratings
- S = D
2
PAK
6
7
-
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
8
1
Device code
51 32 4 6 7 8
VS- 8 T Q 100 S TRL -M3
- Vishay Semiconductors product
- -M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?95291
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-15
1
Document Number: 95046
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D
2
PAK
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC
®
outline TO-263AB
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
M
M
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
P1-P3P4-P6P7-P7

VS-8TQ100STRR-M3

Mfr. #:
Buy VS-8TQ100STRR-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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