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STP5NK100Z

P1-P3P4-P6P7-P9P10-P12P13-P15
May 2009 Doc ID 10850 Rev 5 1/15
15
STP5NK100Z, STF5NK100Z
STW5NK100Z
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247
SuperMESH3™ Power MOSFET
Features
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Applications
■ Switching application
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
Figure 1. Internal schematic diagram
Type
V
DSS
(@T
JMAX
)
R
DS(on)
max I
D
STF5NK100Z 1000 V < 3.7 Ω 3.5 A
STP5NK100Z 1000 V < 3.7 Ω 3.5 A
STW5NK100Z 1000 V < 3.7 Ω 3.5 A
1
2
3
TO-220FPTO-220
TO-247
1
2
3
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code Marking Package Packaging
STF5NK100Z F5NK100Z TO-220FP Tube
STP5NK100Z P5NK100Z TO-220 Tube
STW5NK100Z W5NK100Z TO-247 Tube
www.st.com
Contents STP5NK100Z, STF5NK100Z, STW5NK100Z
2/15 Doc ID 10850 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical ratings
Doc ID 10850 Rev 5 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220, TO-247 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 1000 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 3.5
3.5
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
=100°C 2.2
2.2
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 14
14
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 125 30 W
Derating factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD
(HBM-C=100pF, R=1.5 kΩ)
4000 V
dv/dt
(3)
3. I
SD
≤ 3.5 A, di/dt ≤ 200 A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX.
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; Tc= 25°C)
2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220, TO-247 TO-220FP
R
thj-case
Thermal resistance junction-case max 1 4.2 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
JMAX
)
3.5 A
E
AS
Single pulse avalanche energy
(starting T
j
=25 °C, Id=Iar, Vdd=50 V)
250 mJ
P1-P3P4-P6P7-P9P10-P12P13-P15

STP5NK100Z

Mfr. #:
Buy STP5NK100Z
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
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