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STP5NK100Z

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z
4/15 Doc ID 10850 Rev 5
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0 1000 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125 °C
1
50
µA
µA
I
GSS
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA 3 3.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 1.75 A 2.7 3.7 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance V
DS
=15 V, I
D
= 1.75 A - 4 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
-
1154
106
21.3
pF
pF
pF
C
osseq
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0 V to 800 V - 46.8 pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
V
DD
=500 V, I
D
= 1.75 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 21)
-
22.5
7.7
51.5
19
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=800 V, I
D
= 3.5 A
V
GS
=10 V
(see Figure 22)
-
42
7.3
21.7
59 nC
nC
nC
STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical characteristics
Doc ID 10850 Rev 5 5/15
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 3.5 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 14 A
V
SD
(2)
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 3.5 A, V
GS
=0 - 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 3.5 A,
di/dt = 100 A/µs,
V
DD
=30 V
(see Figure 23)
-
605
3.09
10.5
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 3.5 A,
di/dt = 100 A/µs,
V
DD
=35 V, T
j
=150 °C
(see Figure 23)
-
742
4.2
11.2
ns
µC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 V
Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z
6/15 Doc ID 10850 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
P1-P3P4-P6P7-P9P10-P12P13-P15

STP5NK100Z

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Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH
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