AMIS30600LINI1G

© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 9
1 Publication Order Number:
AMIS−30600/D
AMIS-30600
LIN Transceiver
General Description
The single−wire transceiver AMIS−30600 is a monolithic integrated
circuit in a SOIC−8 package. It works as an interface between the
protocol controller and the physical bus.
The AMIS−30600 is especially suitable to drive the bus line in LIN
systems in automotive and industrial applications. Further it can be
used in standard ISO9141 systems.
In order to reduce the current consumption the AMIS−30600 offers
a stand−by mode. A wake−up caused by a message on the bus pulls the
INH−output high until the device is switched to normal operation
mode.
The transceiver is implemented in I2T100 technology enabling both
high−voltage analog circuitry and digital functionality to co−exist on
the same chip.
The AMIS−30600 provides an ultra−safe solution to today’s
automotive in−vehicle networking (IVN) requirements by providing
unlimited short circuit protection in the event of a fault condition.
Features
LIN−Bus Transceiver
LIN compliant to specification rev. 1.3 and rev. 2.0
I2T high−voltage technology
Bus voltage $ 40 V
Transmission rate up to 20kbaud
SOIC−150−8 package
Protection
Thermal shutdown
Indefinite short circuit protection to supply and ground
Load dump protection (45 V)
Power Saving
Operating voltage = 4.75 to 5.25 V
Power down supply current < 50 mA
EMS Compatibility
Integrated filter and hysteresis for receiver
EMI Compatibility
Integrated slope control for transmitter
Slope control dependant from Vbat to enable maximum capacitive
load
These are Pb−Free Devices
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
PIN ASSIGNMENT
(Top View)
5
6
7
8
1
2
3
4
RxD
TxD
INH
EN
LIN
AMIS−
30600
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
V
CC
V
BB
GND
AMIS−30600
http://onsemi.com
2
LIN
AMIS−30600
GND
RxD
V
BB
5
6
4
INH
2
State
&
Wake−up
Control
Thermal
shutdown
V
CC
8
1
PC20050113.3
TxD
7
V
CC
COMP
Slope
Control
Filter
EN
3
30 kW
10 kW 40 kW
Figure 1. Block Diagram
PC20050113.5
AMIS−
30600
LIN
GND
RxD
TxD
2
1
3
4
5
6
78
V
CC
LIN
controller
VBAT
IN OUT
V
CC
Master Node
1 nF 1 kW
EN
GND
2
5V−reg
V
BB
INH
GND
100 nF
AMIS−
30600
LIN
GND
RxD
TxD
2
1
3
4
5
6
78
V
CC
LIN
controller
VBAT
IN OUT
V
CC
Slave Node
EN
GND
2
5V−reg
V
BB
INH
GND
100 nF
KL30
KL31
LIN−BUS
10 mF10 mF
Figure 2. Application Diagram
AMIS−30600
http://onsemi.com
3
Table 1. PIN LIST AND DESCRIPTIONS
Pin Name Description
1 RxD Receive data output; low in dominant state
2 EN Enable input; transceiver in normal operation mode when high
3 VCC 5V supply input
4 TxD
Transmit data input; low in dominant state; internal 40 kW pullup
5 GND Ground
6 LIN
LIN bus output/input; low in dominant state; internal 30 kW pullup
7 VBB Battery supply input
8 INH Inhibit output; to control a voltage regulator; becomes high when wake−up via LIN bus occurs
Table 2. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Min Max Unit
V
CC
Supply Voltage −0.3 +7 V
V
BB
Battery Supply Voltage −0.3 +40 V
V
LIN
DC Voltage at Pin LIN 0 < V
CC
< 5.50 V −40 +40 V
V
INH
DC Voltage at Pin INH 0 < V
CC
< 5.50 V −0.3 V
BB
+ 0.3 V
V
TxD
DC Voltage at Pin TxD 0 < V
CC
< 5.50 V −0.3 V
CC
+ 0.3 V
V
RxD
DC Voltage at Pin RxD 0 < V
CC
< 5.50 V −0.3 V
CC
+ 0.3 V
V
EN
DC Voltage at Pin EN 0 < V
CC
< 5.50 V −0.3 V
CC
+ 0.3 V
V
esd(LIN)
Electrostatic Discharge Voltage at LIN Pin (Note 1) −4 +4 kV
V
esd
Electrostatic Discharge Voltage at All Other Pins (Note 1) −4 +4 kV
V
tran(LIN)
Transient Voltage at Pin LIN (Note 2) −150 +150 V
V
tran(VBB)
Transient Voltage at Pin V
BB
(Note 3) −150 +150 V
T
amb
Ambient Temperature −40 +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Standardized Human Body Model system ESD pulses in accordance to IEC 1000.4.2.
2. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, capacitive coupled test pulses 1 (−100 V), 2 (+100 V), 3a (−150 V),
and 3b (+150 V). See Figure 8.
3. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, direct coupled test pulses 1 (−100 V), 2 (+75 V), 3a (−150 V), 3b
(+150 V), and 5 (+80 V). See Figure 8.
Table 3. OPERATING RANGE
Symbol Parameter Min Typ Max Unit
V
CC
Supply Voltage 4.75 +5.25 V
V
BB
Battery Supply Voltage 7.3 +18 V
T
J
Maximum Junction Temperature −40 +150 °C
T
jsd
Thermal Shutdown Temperature +150 +170 +190 °C
R
thj−a
Thermal Resistance Junction−to−Ambient 185 °C/W

AMIS30600LINI1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
LIN Transceivers LIN TRANSCEIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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