OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AMIS30600LINI1G

P1-P3P4-P6P7-P9P10-P11
AMIS−30600
http://onsemi.com
4
APPLICATION INFORMATION
V
CC
= on
permanently
V
CC
controlled by INH:
INH = Float V
CC
= off
INH = H V
CC
= on
POWER
UP
EN = H
EN = L
INH = H
Rx = H
EN = L
Wake−up over bus
t > t
wake
V
BB
= on
and
V
CC
= on
EN = H
INH = Float
Rx = H
INH = H
Rx = LIN data
STANDBY
MODE
NORMAL
MODE
SLEEP
MODE
POWER
UP
EN = H
EN = L
INH = H V
CC
= on
Rx = H
EN = L
Wake−up over bus
t > t
wake
INH = Float V
CC
= off
Rx = Float
INH = H
Rx = LIN data
STANDBY
MODE
NORMAL
MODE
SLEEP
MODE
V
BB
= on
Figure 3. State Diagrams
→
→
→
→
The AMIS−30600 has a slope which depends of the
supply V
bat
. This implementation guarantees biggest
slope−time under all load conditions. The rising slope has to
be slower then the external RC−time−constant, otherwise
the slope will be terminated by the RC−time−constant and no
longer by the internal slope−control. This would affect the
symmetry of the bus−signal and would limit the maximum
allowed bus−speed.
A capacitor of 10 mF at the supply voltage input VB
buffers the input voltage. In combination with the required
reverse polarity diode this prevents the device from
detecting power down conditions in case of negative
transients on the supply line.
In order to reduce the current consumption, the
AMIS−30600 offers a sleep operation mode. This mode is
selected by switching the enable input EN low (see Figure 4).
An external voltage regulator can be controlled via the
INH output in order to minimize the current consumption of
the whole application in sleep mode (see Figure 2). A
wake−up caused by a message on the communication bus
automatically enables the voltage regulator by switching the
INH output high (see Figure 3). In case the voltage regulator
control input is not connected to the INH output, or the
microcontroller is active respectively, the AMIS−30600 can
be set in normal operation mode by EN = H (see Figure 3).
AMIS−30600
http://onsemi.com
5
Table 4. DC CHARACTERISTICS V
CC
= 4.75 V to 5.25 V; V
BB
= 7.3 V to 18 V,V
EN
< V
ENon
, T
A
= −40°C to +125°C; R
L
= 500 W
unless specified otherwise. All voltages with respect to ground, positive current flowing into pin, unless otherwise specified.
Symbol
Parameter Conditions Min Typ Max Unit
SUPPLY (Pin V
CC
and Pin V
BB
)
I
CC
5 V Supply Current Dominant; V
TxD
= 0 V
Recessive; V
TxD
= V
CC
400
250
700
500
μA
I
BB
Battery Supply Current Dominant; V
TxD
= 0 V
Recessive; V
TxD
= V
CC
1
100
1.5
200
mA
μA
I
BB
Battery Supply Current Sleep Mode; V
EN
= 0 V 35 55 μA
I
CC
5 V Supply Current Sleep Mode; V
EN
= 0 V 0.25 1 μA
TRANSMITTER DATA INPUT (Pin TxD)
V
IH
High−Level Input Voltage Output Recessive 0.7 x V
CC
− V
CC
V
V
IL
Low−Level Input Voltage Output Dominant 0 − 0.3 x V
CC
V
R
TxD,pu
Pullup Resistor to V
CC
24 60 k
RECEIVER DATA OUTPUT (Pin RxD)
V
OH
High−Level Output Voltage I
RXD
= −10 mA 0.8 x V
CC
V
CC
V
V
OL
Low−Level Output Voltage I
RXD
= 5 mA 0 0.2 x V
CC
V
ENABLE INPUT (Pin EN)
V
EN,on
High−Level Input Voltage Normal Mode 0.7 x V
CC
− V
CC
V
V
EN,off
Low−Level Input Voltage Low Power Mode 0 − 0.3 x V
CC
V
R
EN,pd
Pulldown Resistor−to−GND 6 10 15 k
INHIBIT OUTPUT (Pin INH)
V
INH,d
High−Level Voltage Drop:
V
INH,d
= V
BB
− V
INH
I
INH
= − 0.15 mA 0.5 1.0 V
I
INH,lk
Leakage Current Sleep Mode; V
INH
= 0 V −5.0 − 5.0 μA
BUS LINE (Pin LIN)
V
bus,rec
Recessive Bus Voltage at Pin
LIN
V
TxD
= V
CC
0.9 x V
BB
− V
BB
V
V
bus,dom
Dominant Output Voltage at Pin
LIN
V
TxD
= 0 V ; V
BB
= 7.3 V
V
TxD
= 0 V; V
BB
= 18 V;
R
L
= 500 W
0 − 1.2
2.0
V
I
bus,sc
Bus Short−Circuit Current V
bus,short
= 18 V 40 85 130 mA
I
bus,lk
Bus Leakage Current V
CC
= V
BB
= 0V; V
bus
= −8 V
V
CC
= V
BB
= 0V; V
bus
= 20 V
−400 −200
5
20
μA
R
bus
Bus Pullup Resistance; Note 4 V
TxD
= 0 V 20 30 47
kW
V
bus,rd
Receiver Threshold:
Recessive−to−Dominant
0.4 x V
BB
0.48 x V
BB
0.6 x V
BB
V
V
bus,dr
Receiver Threshold:
Dominant−to−Recessive
0.4 x V
BB
0.52 x V
BB
0.6 x V
BB
V
V
q
Receiver Hysteresis V
bus,hys
= V
bus,rec
− V
bus,dom
0.05 x V
BB
0.08 x V
BB
0.175 x V
BB
V
V
WAKE
Wake−up Threshold Voltage 0.4 x V
BB
0.6 x V
BB
V
4. Guaranteed by design. The total resistance of the pullup resistor and the serial diode is measured on ATE.
AMIS−30600
http://onsemi.com
6
Table 5. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN V13 V
CC
= 4.75 V to 5.25 V; V
BB
= 7.3 V to 18 V,V
EN
< V
ENon
, T
A
= −40°C to +125°C; R
L
= 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2]
6.8 nF 600 W / [L3] 10 nF 500 W.
Symbol
Parameter Conditions Min Typ Max Unit
t_slope_F Slope Time Falling Edge; (Note 5) See Figure 5 4 − 24
ms
t_slope_R Slope Time Rising Edge; (Note 5) See Figure 5 4 − 24
ms
t_slope_Sym Slope Time Symmetry; (Note 5) t_slope_F − t_slope_R −8 − +8
ms
T_rec_F Propagation Delay Bus Dominant to
RxD = Low; (Note 6)
See Figures 4 and 5 2 6
ms
T_rec_R Propagation Delay Bus Recessive to
RxD = High; (Note 6)
See Figures 4 and 5 6 6
ms
t
WAKE
Wake−up Delay Time 30 100 200
ms
5. Guaranteed by design; not measured for all supply/load combinations on ATE.
6. Not measured on ATE.
Table 6. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN v2.0 V
CC
= 4.75 V to 5.25 V; V
BB
= 7.3 V to
18 V,V
EN
< V
ENon
, T
A
= −40°C to +125°C; R
L
= 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF
1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W.
Symbol Parameter Conditions Min Typ Max Unit
DYNAMIC RECEIVER CHARACTERISTICS ACCORDING TO LIN v2.0
trx_pdr
Propagation Delay Bus Dominant to
RxD = Low; (Note 7)
See Figure 6 6
ms
trx_pdf Propagation Delay Bus Recessive to
RxD = High; (Note 7)
See Figure 6 6
ms
trx_sym Symmetry of Receiver Propagation Delay trx_pdr − trx_pdf −2 − +2
ms
DYNAMIC TRANSMITTER CHARACTERISTICS ACCORDING TO LIN v2.0
D1
Duty Cycle 1 = t
Bus_rec(min)
/(2 x t
Bit
);
See Figure
0.396 0.5
D1 Duty Cycle 1 = t
Bus_rec(min)
/(2 x t
Bit
);
See Figure 6
THRec(max) = 0.744 x V
bat
;
THDom(max) = 0.581 x V
bat
;V
bat
= 7.0 V to 18 V; t
Bit
= 50 ms
THRec(max) = 0.744 x V
bat
;
THDom(max) = 0.581 x V
bat
;V
bat
= 7.0V; t
Bit
= 50 ms;
t
amb
= −40°C
0.366 0.5
D2 Duty Cycle 2 = t
Bus_rec(max)
/(2 x t
Bit
);
See Figure 6
THRec(min) = 0.284 x V
bat
;
THDom(min) = 0.422 x V
bat
;V
bat
= 7.6 V to 18 V; t
Bit
= 50 ms;
0.5 0.581
7. Not measured on ATE.
P1-P3P4-P6P7-P9P10-P11

AMIS30600LINI1G

Mfr. #:
Buy AMIS30600LINI1G
Manufacturer:
ON Semiconductor
Description:
LIN Transceivers LIN TRANSCEIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet