MJH11022G

© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 10
1 Publication Order Number:
MJH11017/D
MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
High DC Current Gain @ 10 Adc — h
FE
= 400 Min (All Types)
Collector−Emitter Sustaining Voltage
V
CEO(sus)
= 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 1.2 V (Typ) @ I
C
= 5.0 A
= 1.8 V (Typ) @ I
C
= 10 A
Monolithic Construction
These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
V
CEO
150
200
250
Vdc
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
V
CB
150
200
250
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
15
30
Adc
Base Current I
B
0.5 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
150
1.2
W
W/_C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.83
_C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
SOT−93
(TO−218)
CASE 340D
STYLE 1
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR 2
BASE
1
EMITTER 3
COLLECTOR 2
BASE
1
EMITTER 3
NPN PNP
MJH11018 MJH11017
MJH11020
MJH11022
MJH11019
MJH11021
3
2
1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device wil
l
be available only in the TO−247
package. Reference FPCN# 16827.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
www.onsemi.com
2
MARKING DIAGRAMS
AYWWG
MJH110xx
MJH110xx
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
1 BASE
2 COLLECTOR
3 EMITTER
TO−247 TO−218
ORDERING INFORMATION
Device Order Number Package Type Shipping
MJH11017G TO−218
(Pb−Free)
30 Units / Rail
MJH11018G TO−218
(Pb−Free)
30 Units / Rail
MJH11019G TO−218
(Pb−Free)
30 Units / Rail
MJH11020G TO−218
(Pb−Free)
30 Units / Rail
MJH11021G TO−218
(Pb−Free)
30 Units / Rail
MJH11022G TO−218
(Pb−Free)
30 Units / Rail
MJH11017G TO−247
(Pb−Free)
30 Units / Rail
MJH11018G TO−247
(Pb−Free)
30 Units / Rail
MJH11019G TO−247
(Pb−Free)
30 Units / Rail
MJH11020G TO−247
(Pb−Free)
30 Units / Rail
MJH11021G TO−247
(Pb−Free)
30 Units / Rail
MJH11022G TO−247
(Pb−Free)
30 Units / Rail
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
www.onsemi.com
3
P
D
, POWER DISSIPATION (WATTS)
160
0
T
C
, CASE TEMPERATURE (°C)
40 60 100 120 16080 14020
Figure 1. Power Derating
0
20
40
60
80
100
140
120
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 0.1 Adc, I
B
= 0) MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
V
CEO(sus)
150
200
250
Vdc
Collector Cutoff Current
(V
CE
= 75 Vdc, I
B
= 0) MJH11017, MJH11018
(V
CE
= 100 Vdc, I
B
= 0) MJH11019, MJH11020
(V
CE
= 125 Vdc, I
B
= 0) MJH11021, MJH11022
I
CEO
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
J
= 150_C)
I
CEV
0.5
5.0
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc I
C
= 0) I
EBO
2.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
h
FE
400
100
15,000
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 100 mA)
(I
C
= 15 Adc, I
B
= 150 mA)
V
CE(sat)
2.5
4.0
Vdc
Base−Emitter On Voltage (I
C
= 10 A, V
CE
= 5.0 Vdc) V
BE(on)
2.8 Vdc
Base−Emitter Saturation Voltage (I
C
= 15 Adc, I
B
= 150 mA) V
BE(sat)
3.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz) f
T
3.0
Output Capacitance MJH11018, MJH11020, MJH11022
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021
C
ob
400
600
pF
Small−Signal Current Gain (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz) h
fe
75
SWITCHING CHARACTERISTICS
Typical
Characteristic Symbol NPN PNP Unit
Delay Time
(V
CC
= 100 V, I
C
= 10 A, I
B
= 100 mA
V
BE(off)
= 5.0 V) (See Figure 2)
t
d
150 75 ns
Rise Time t
r
1.2 0.5
ms
Storage Time t
s
4.4 2.7
ms
Fall Time t
f
2.5 2.5
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

MJH11022G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 15A 250V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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