MJH11022G

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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Figure 2. Switching Times Test Circuit
R
B
& R
C
varied to obtain desired current levels
D
1
, must be fast recovery types, e.g.:
1N5825 used above I
B
100 mA
MSD6100 used below I
B
100 mA
t
r
, t
f
10 ns
Duty Cycle = 1.0%
For t
d
and t
r
, D
1
is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
V2
APPROX
+12 V
0
V1
APPROX
-8.0 V
V
CC
-100 V
TUT
SCOPE
R
B
+4.0 V
D
1
51
R
C
25 ms
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1.0 2.0 5.0 10 20 50 100 200 500
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.1 0.50.2
RESISTANCE (NORMALIZED)
100
0
0.5
0.3
0.07
0.03
0.01 0.03 3.0 30 3000.3
0.2
0.1
0.05
0.02
0.01
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 ms
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
1.0 ms
5.0 ms
0.1 ms
dc
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
30
2.0
I
C
, COLLECTOR CURRENT (AMPS)
3.0 10
10
0.5
0.2
5.0
20
1.0
20 100
0
T
C
= 25°C SINGLE PULSE
5.0 50 25015030
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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5
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
30
140
I
C
, COLLECTOR CURRENT (AMPS)
60 180100
10
20
260220
0
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
L = 200 mH
I
C
/I
B1
50
T
C
= 100°C
V
BE(off)
= 0-5.0 V
R
BE
= 47 W
DUTY CYCLE = 10%
0
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
T
C
= 150°C
1000
3000
2000
5000
7000
10,000
PNP NPN
Figure 6. DC Current Gain
0.2 153.01.00.5 5.0 100.3
h
FE
, DC CURRENT GAIN
T
C
= 150°C
25°C
-55°C
V
CE
= 5.0 V
I
C
, COLLECTOR CURRENT (AMPS)
100
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
500
200
0.7
1000
2000
5000
10,000
0.2 153.01.00.5 5.0 100.3 7.0
25°C
-55°C
V
CE
= 5.0 V
100
500
200
0.7
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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VOLTAGE (VOLTS) V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
B
, BASE CURRENT (mA)
1.0
1.0
2.0 5.0
3.0
2.5
4.0
3.5
3.0 10 30
4.5
2.0
50 100
I
C
= 15 A
20
Figure 7. Collector Saturation Region
Figure 8. “On” Voltages
1.5
300 500 1000200
T
J
= 25°C
I
C
= 10 A
I
C
= 5.0 A
I
C
, COLLECTOR CURRENT (AMPS)
3.0
2.5
VOLTAGE (VOLTS)
4.0
3.5
2.0
0.5
0.2 0.5 5.00.3 1.00.7 3.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 100
V
BE
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 100
7.02.0 10 20
I
B
, BASE CURRENT (mA)
1.0 2.0 5.03.0 10 30 50 100
I
C
= 15 A
20 300 500200
T
J
= 25°C
I
C
= 10 A
I
C
= 5.0 A
I
C
, COLLECTOR CURRENT (AMPS)
1.5
1.0
1000
PNP NPN
PNP NPN
3.0
2.5
4.0
3.5
2.0
0.5
0.2 0.5 5.01.00.7
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 100
V
BE
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 100
2.0 10 20
1.5
1.0
1.0
3.0
2.5
4.0
3.5
4.5
2.0
1.5
BASE
EMITTER
COLLECTOR
BASE
EMITTER
COLLECTOR
PNP NPN
Figure 9. Darlington Schematic
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021

MJH11022G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 15A 250V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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