DMP6110SVT-7 Datasheet DMP6110SVT-7, DMP6110SVT-13 | P1-P3

DMP6110SVT

Document number: DS37594 Rev. 2 - 2

1 of 7

www.diodes.com

April 2015

DMP6110SVT

NEW PROD UCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

Max

I

D

Max

T

C

= +25°C

-60V

105m @ V

GS

= -10V

-7.3A

130m @ V

GS

= -4.5V

-6.5A

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(R

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TSOT26

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See Diagram

 Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMP6110SVT-7

TSOT26

3,000/Tape & Reel

DMP6110SVT-13

TSOT26

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2015

2016

2017

2018

2019

2020

2021

Code

C

D

E

F

G

H

I

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

TSOT26

Device Schematic

Equivalent Circuit

D

S

G

D

G

D

S

1

2

3

6

5

4

P61 = Product Type Marking Code

YM or YM = Date Code Marking

Y or Y = Year (ex: C = 2015)

M = Month (ex: 9 = September)

e3

DMP6110SVT

Document number: DS37594 Rev. 2 - 2

2 of 7

www.diodes.com

April 2015

DMP6110SVT

NEW PROD UCT

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-60

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note 6) V

GS

= -10V

T

C

= +25°C

T

C

= +70°C

I

D

-7.3

-5.8

A

Maximum Body Diode Forward Current (Note 6)

I

S

A

Pulsed Drain Current (380µs Pulse, 1% Duty Cycle)

I

DM

-24

A

Avalanche Current (Note 7) L = 0.1mH

I

AS

-19

A

Repetitive Avalanche Energy (Note 7) L = 0.1mH

E

AS

18

mJ

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

T

A

= +25°C

P

D

1.2

W

T

A

= +70°C

0.75

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

R



JA

105

°C/W

t<10s

60

°C/W

Total Power Dissipation (Note 6)

T

A

= +25°C

P

D

1.8

W

T

A

= +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

R



JA

69

°C/W

t<10s

39

°C/W

Thermal Resistance, Junction to Case (Note 6)

R



JC

15

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

-60



V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS



-1

µA

V

DS

= -48V, V

GS

= 0V

Gate-Source Leakage

I

GSS



100

nA

V

GS

= ±16V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(TH)

-1



-3

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)



105

mΩ

V

GS

= -10V, I

D

= -4.5A



130

V

GS

= -4.5V, I

D

= -3.5A

Diode Forward Voltage

V

SD



-0.7

-1.2

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss



969



pF

V

DS

= -30V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss



57



Reverse Transfer Capacitance

C

rss



44



Gate Resistance

R

G



13.7



Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= -4.5V)

Q

g



8.2



nC

V

DS

= -30V, I

D

= -12A

Total Gate Charge (V

GS

= -10V)

Q

g



17.2



Gate-Source Charge

Q

gs



3.0



Gate-Drain Charge

Q

gd



3.1



Turn-On Delay Time

t

D(ON)



4.4



ns

V

GS

= -10V, V

DS

= -30V, R

GEN

= 3Ω,

I

D

= -12A

Turn-On Rise Time

t

R



23



Turn-Off Delay Time

t

D(OFF)



34



Turn-Off Fall Time

t

F



42



Body Diode Reverse Recovery Time

t

RR



13.2



ns

I

S

= -12A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

Q

RR



6.18



nC

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

AS

and E

AS

rating are based on low frequency and duty cycles to keep T

J

= +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMP6110SVT

Document number: DS37594 Rev. 2 - 2

3 of 7

www.diodes.com

April 2015

DMP6110SVT

NEW PROD UCT

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

0 1 2 3 4 5

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS

=-2.8V

V

GS

=-3.5V

V

GS

=-3.0V

V

GS

=-4.0V

V

GS

=-10V

V

GS

=-4.5V

V

GS

=-5.0V

0

2

4

6

8

10

12

14

16

18

20

1 1.5 2 2.5 3 3.5 4 4.5 5

I

D

, DRAIN CURRENT (A)

V

GS

, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V

DS

=-5V

-55℃

25℃

85℃

125℃

150℃

0

0.05

0.1

0.15

0.2

0.25

0.3

0 4 8 12 16 20

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE

(Ω)

V

GS

, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D

=-4.5A

I

D

=-3.5A

0.02

0.04

0.06

0.08

0.1

0.12

0.14

1 5 9 13 17 21

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE

(Ω)

I

D

, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V

GS

=-4.5V

V

GS

=-10V

0.02

0.04

0.06

0.08

0.1

0.12

0.14

1 3 5 7 9 11 13 15 17 19 21

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE (Ω)

I

D

, DRAIN CURRENT(A)

Figure 5. Typical On-Resistance vs. Drain Current and

Temperature

V

GS

=-10V

-55℃

25℃

85℃

125℃

150℃

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

R

DS(ON)

, DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

T

J

, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

V

GS

=-10V, I

D

=-4.5A

V

GS

=-4.5V, I

D

=-3.5A

DMP6110SVT-7

DMP6110SVT-7

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