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DMP6110SVT-7
P1-P3
P4-P6
P7-P7
DMP6110SVT
Document numbe
r: DS37594 R
ev. 2 - 2
4 of 7
www.diodes.com
April 2015
©
Diodes Incorporated
DMP6110SVT
N
E
W
P
R
O
D
U
C
T
N
E
W
P
R
O
D
U
C
T
0.02
0.04
0.06
0.08
0.1
0.12
0.14
-
50
-
25
0
25
50
75
100
125
150
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE
(
Ω
)
T
J
, JUNCTION
TEMPERATURE
(
℃
)
Figure
7. On-Resistance
Variation w
ith Temperature
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-3.5A
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-
50
-
25
0
25
50
75
100
125
150
V
GS(TH)
, GATE THRESHOLD
VOLTAGE
(V)
T
J
, JUNCTION
TEMPERATURE
(
℃
)
Figure
8. Gate Threshold
Variation
vs. Junction
Temperature
I
D
=-
250
μ
A
I
D
=-1mA
0.01
0.1
1
10
100
1000
10000
100000
0
5
10
15
20
25
30
35
40
I
DSS
, LEAKAGE C
URRENT (
nA)
V
DS
, DRAIN-SOUR
CE VOLTAGE
(V)
Figure
10. Typical
Drain-Source Leakage
Curr
ent vs.
Voltage
25
℃
85
℃
125
℃
150
℃
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
I
S
, SOURC
E CURREN
T (A)
V
SD
, SOURC
E-DRAIN VOLTAGE
(V)
Figure
9. Diode For
ward
Voltage vs. Current
V
GS
=0V, T
A
=-
55
℃
V
GS
=0V, T
A
=25
℃
V
GS
=0V, T
A
=150
℃
V
GS
=0V, T
A
=125
℃
V
GS
=0V, T
A
=85
℃
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
V
GS
(V)
Q
g
(nC)
Figure
12. Gate Cha
rge
V
DS
=-30V, I
D
=-
12A
10
100
1000
10000
0
5
10
15
20
25
30
35
40
C
T
, JUNCTION C
APACITANCE
(pF)
V
DS
, DRAIN-SOU
RCE VOLTAGE
(V)
Figure
11. Typical
Junction Ca
pacitance
f=1MHz
C
iss
C
oss
C
rss
DMP6110SVT
Document numbe
r: DS37594 R
ev. 2 - 2
5 of 7
www.diodes.com
April 2015
©
Diodes Incorporated
DMP6110SVT
N
E
W
P
R
O
D
U
C
T
N
E
W
P
R
O
D
U
C
T
0.001
0.01
0.1
1
1E
-
05
0.0001
0.001
0.01
0.1
1
10
100
1000
r(t), TR
ANSIENT
THERMAL RESISTANCE
t1, PULSE
DURATION
TIME (sec)
Figure
14. Transient
Thermal Re
sistance
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=105
℃
/W
Duty Cy
cle, D=t1 / t2
D=Single
Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=105
℃
/W
Duty Cy
cle, D=t1 / t2
D=Single
Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=105
℃
/W
Duty Cy
cle, D=t1 / t2
D=Single
Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
D=0.7
D=0.9
0.01
0.1
1
10
100
0.1
1
10
100
I
D
, DRAIN
CURRENT
(A)
V
DS
, DRAIN-SOU
RCE VOLTAGE
(V)
Figure
13. SOA, Safe
Operation Area
T
J(MAX)
=150
℃
T
A
=25
℃
Single Pulse
DUT
on 1*MRP boa
rd
V
GS
=
-
10
V
R
DS(ON)
Limited
DC
P
W
=10s
P
W
=1s
P
W
=100ms
P
W
=10ms
P
W
=1ms
P
W
=100
μ
s
DMP6110SVT
Document numbe
r: DS37594 R
ev. 2 - 2
6 of 7
www.diodes.com
April 2015
©
Diodes Incorporated
DMP6110SVT
N
E
W
P
R
O
D
U
C
T
N
E
W
P
R
O
D
U
C
T
Package Outline Dimensions
Please see AP020
02 at http://w
ww
.diodes.com/data
sheets/ap0200
2.pdf for the latest ver
sion.
Suggested Pad Layout
Please see
AP02001 at
http://www
.diodes.com/data
sheets/ap0200
1.pdf for the
latest ve
rsion.
TSOT26
Dim
Min
Max
Typ
A
1.00
A1
0.01
0.10
A2
0.84
0.90
D
2.90
E
2.80
E1
1.60
b
0.30
0.45
c
0.12
0.20
e
0.95
e1
1.90
L
0.30
0.50
L2
0.25
θ
0°
8°
4°
θ1
4°
12°
A
ll Dimensions in mm
Dimensions
Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
c
A1
L
E1
E
A2
D
e1
e
6x b
4x
1
L2
A
Y1
C
C
X (
6x
)
Y
(6
x)
P1-P3
P4-P6
P7-P7
DMP6110SVT-7
Mfr. #:
Buy DMP6110SVT-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V P-Ch Enh FET 60Vds 20Vgs
Lifecycle:
New from this manufacturer.
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