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IXXX300N60B3

P1-P3P4-P6
© 2012 IXYS CORPORATION, All Rights Reserved
XPT
TM
600V IGBTs
GenX3
TM
IXXK300N60B3
IXXX300N60B3
V
CES
= 600V
I
C110
= 300A
V
CE(sat)
≤ ≤
≤ ≤
≤
1.6V
t
fi(typ)
= 95ns
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 175°C 600 V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C (Chip Capability) 550 A
I
LRMS
Leads Current Limit 160 A
I
C110
T
C
= 110°C (Chip Capability) 300 A
I
CM
T
C
= 25°C, 1ms 1140 A
I
A
T
C
= 25°C 100 A
E
AS
T
C
= 25°C 500 mJ
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 1Ω I
CM
= 600 A
(RBSOA) Clamped Inductive Load @V
CE
≤ V
CES
t
sc
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C 10 μs
(SCSOA) R
G
= 10Ω, Non Repetitive
P
C
T
C
= 25°C 2300 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
DS100503(10/12)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 25 μA
T
J
= 150°C 2.5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±200 nA
V
CE(sat)
I
C
= 100A, V
GE
= 15V, Note 1 1.3 1.6 V
T
J
= 150°C 1.4 V
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
Advance Technical Information
Features
z
Optimized for 10-30kHz Switching
z
Square RBSOA
z
International Standard Packages
z
Avalanche Rated
z
Short Circuit Capability
z
High Current Handling Capability
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK300N60B3
IXXX300N60B3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 30 50 S
C
ie
s
13.3 nF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 757 pF
C
res
246 pF
Q
g
460 nC
Q
ge
I
C
= 300A, V
GE
= 15V, V
CE
= 0.5 • V
CES
137 nC
Q
gc
196 nC
t
d(on)
50 ns
t
ri
87 ns
E
on
3.45 mJ
t
d(off)
190 ns
t
fi
95 ns
E
of
f
2.86 4.40 mJ
t
d(on)
50 ns
t
ri
87 ns
E
on
4.47 mJ
t
d(off)
230 ns
t
fi
200 ns
E
off
3.70 mJ
R
thJC
0.065 °C/W
R
thCS
0.15 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Inductive load, T
J
= 150°C
I
C
= 100A, V
GE
= 15V
V
CE
= 400V, R
G
= 1Ω
Note 2
Inductive load, T
J
= 25°C
I
C
= 100A, V
GE
= 15V
V
CE
= 400V, R
G
= 1Ω
Note 2
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247
TM
Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2012 IXYS CORPORATION, All Rights Reserved
IXXK300N60B3
IXXX300N60B3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
10
V
9V
11
V
7
V
8V
12
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
012345678910
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15
V
13
V
12
V
10
V
11
V
8
V
9
V
7
V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
50
100
150
200
250
300
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
12
V
10
V
8
V
9
V
7
V
11
V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15
V
I
C
= 200
A
I
C
= 100
A
I
C
= 300
A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 300
T
J
= 25ºC
200
A
100
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
P1-P3P4-P6

IXXX300N60B3

Mfr. #:
Buy IXXX300N60B3
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 600V IGBT 300A
Lifecycle:
New from this manufacturer.
Delivery:
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