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IXXX300N60B3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK300N60B3
IXXX300N60B3
Fig. 7. Transconductance
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC, 25ºC, 150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
100
200
300
400
500
600
700
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450 500
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 300A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 12. Forward-Bias Safe Operating Area
0
1
10
100
1,000
10,000
1 10 100 1000
V
CE
- Volts
I
C
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limit
DC
100µsExternal Lead Current Limit
100ms
© 2012 IXYS CORPORATION, All Rights Reserved
IXXK300N60B3
IXXX300N60B3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 50
A
I
C
= 100
A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
100
140
180
220
260
300
340
380
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R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 100
A
I
C
= 50
A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - -
-
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω,
V
GE
= 15V
V
CE
= 400V
I
C
= 50
A
I
C
= 100
A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
50
100
150
200
250
300
350
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
100
150
200
250
300
350
400
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - -
-
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
50
100
150
200
250
300
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
160
200
240
280
320
360
t
d(off)
- Nanoseconds
t
f i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100
A
I
C
= 50
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK300N60B3
IXXX300N60B3
IXYS REF: IXX_300N60B3(9D)10-10-12
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
44
46
48
50
52
54
56
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - -
-
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
45
46
47
48
49
50
51
52
53
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - -
-
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100
A
I
C
= 50
A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
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R
G
- Ohms
t
r i
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 50
A
I
C
= 100
A
P1-P3P4-P6

IXXX300N60B3

Mfr. #:
Buy IXXX300N60B3
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 600V IGBT 300A
Lifecycle:
New from this manufacturer.
Delivery:
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