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SI1025X-T1-E3

P1-P3P4-P6P7-P7
Vishay Siliconix
Si1025X
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1
P-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• High-Side Switching
• Low On-Resistance: 4
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 23 pF (typ.)
• Miniature Package
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven Without Buffer
• Small Board Area
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid State Relays
PRODUCT SUMMARY
V
DS (min)
(V) R
DS(on)
()V
GS(th)
(V) I
D
(mA)
- 60
4 at V
GS
= - 10 V
- 1 to - 3.0 - 500
Marking Code: D
Top View
3
1
D
2
G
2
S
1
52
4
6
D
1
S
2
G
1
SC-89
Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 200 - 190
mA
T
A
= 85 °C
- 145 - 135
Pulsed Drain Current
b
I
DM
- 650
Continuous Source Current (Diode Conduction)
a
I
S
- 450 - 380
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
280 250
mW
T
A
= 85 °C
145 130
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
www.vishay.com
2
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
Vishay Siliconix
Si1025X
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 10 µA
- 60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 0.25 mA
- 1 - 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 10 V
± 200
nA
V
DS
= 0 V, V
GS
= ± 5 V
± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 50 V, V
GS
= 0 V
- 25
V
DS
= - 50 V, V
GS
= 0 V, T
J
= 85 °C
- 250
On-State Drain Current
a
I
D(on)
V
DS
= - 10 V, V
GS
= - 4.5 V
- 50
mA
V
DS
= - 10 V, V
GS
= - 10 V
- 600
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 25 mA
8
V
GS
= - 10 V, I
D
= - 500 mA
4
V
GS
= - 10 V, I
D
= - 500 mA, T
J
= 125 °C
6
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 100 mA
100 mS
Diode Forward Voltage
a
V
SD
I
S
= - 200 mA, V
GS
= 0 V
- 1.4 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 30 V, V
GS
= - 15 V, I
D
- 500 mA
1.7
nCGate-Source Charge
Q
gs
0.26
Gate-Drain Charge
Q
gd
0.46
Input Capacitance
C
iss
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
23
pFOutput Capacitance
C
oss
10
Reverse Transfer Capacitance
C
rss
5
Switching
b, c
Tur n - On T im e
t
ON
V
DD
= - 25 V, R
L
= 150 , I
D
- 165 mA,
V
GEN
= - 10 V, R
g
= 10
20
ns
Turn-Off Time
t
OFF
35
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V
5 V
4 V
6 V
7 V
8 V
Transfer Characteristics
0
300
600
900
1200
02468 10
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
3
Vishay Siliconix
Si1025X
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0
4
8
12
16
20
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
V
GS
= 5 V
0
3
6
9
12
15
0.0 0.3 0.6 0.9 1.2 1.5 1.8
I
D
= 500 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 30 V
V
DS
= 48 V
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
T
J
= 25 °C
T
J
= 125 °C
V
SD
-
Source-to-Drain Voltage (V)
-Source Current (A)I
S
10
T
J
= - 55 °C
V
GS
= 0 V
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
8
16
24
32
40
0 5 10 15 20 25
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
0.0
0.3
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V at 25 mA
(Normalized)
- On-ResistanceR
DS(on)
0
2
4
6
8
10
02468 10
V
GS
- Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
- On-Resistance (Ω)R
DS(on)
P1-P3P4-P6P7-P7

SI1025X-T1-E3

Mfr. #:
Buy SI1025X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1025X-GE3
Lifecycle:
New from this manufacturer.
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