IRGPS40B120UP
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Ref.Fig.
5, 6
7, 9
10
11
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage ––– 3.12 3.40 I
C
= 40A V
GE
= 15V
––– 3.39 3.71 V I
C
= 50A
––– 3.88 4.39 I
C
= 40A, T
J
= 125°C
––– 4.24 4.79 I
C
= 50A, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage 4.0 5.0 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -12 ––– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
g
fe
Forward Transconductance ––– 30.5 ––– S V
CE
= 50V, I
C
= 40A, PW=80µs
I
CES
Zero Gate Voltage Collector Current ––– ––– 500 µA V
GE
= 0V, V
CE
= 1200V
––– 100 1200 V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current ––– ––– ±100 nA V
GE
= ±20V
8, 9
10 ,11
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ––– 340 510 I
C
= 40A
Qge Gate - Emitter Charge (turn-on) ––– 43 65 nC V
CC
= 600V
Q
gc
Gate - Collector Charge (turn-on) ––– 165 248 V
GE
= 15V
E
on
Turn-On Switching Loss ––– 1400 1750 µJ I
C
= 40A, V
CC
= 600V
E
off
Turn-Off Switching Loss ––– 1650 2050 V
GE
= 15V,R
G
= 4.7Ω, L =200µH
E
tot
Total Switching Loss ––– 3050 3800 Ls = 150nH T
J
= 25°C
E
on
Turn-On Switching Loss ––– 1950 2300 T
J
= 125°C
E
off
Turn-Off Switching Loss ––– 2200 2950 µJ Energy losses include "tail" and
E
tot
Total Switching Loss ––– 4150 5250 diode reverse recovery.
t
d(on)
Turn-On Delay Time ––– 76 99 I
C
= 40A, V
CC
= 600V
t
r
Rise Time ––– 39 55 V
GE
= 15V, R
G
= 4.7Ω L =200µH
t
d(off)
Turn-Off Delay Time ––– 332 365 ns Ls = 150nH, T
J
= 125°C
t
f
Fall Time ––– 25 33
C
ies
Input Capacitance ––– 4300 ––– V
GE
= 0V
C
oes
Output Capacitance ––– 270 ––– pF V
CC
= 30V
C
res
Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz
T
J
= 150°C, I
C
= 160A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7Ω
T
J
= 150°C, Vp =1200V
V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7Ω
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
17
CT1
CT4
WF1
WF2
12,14
13, 15
CT4
WF1
WF2
16
4
CT3
WF4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs
Ref.Fig.
Note:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 4.7Ω.
