IRGPS40B120UPBF

IRGPS40B120UP
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Fig. 17 - Typical Gate Charge
vs. V
GE
I
CE
= 40A; L = 600µH
Fig. 16- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 50 100 150 200 250 300 350 400
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
600V
800V
Fig 18. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRGPS40B120UP
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Fig.C.T.1 - Gate Charge Circuit (turn-on)
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
1K
VCC
DUT
0
L
L
Rg
80 V
DUT
1000V
DC
DRIVER
DUT
900V
DIODE CLAMP
L
Rg
VCC
DUT /
DRIVER
Rg
VCC
DUT
R =
V
CC
I
CM
IRGPS40B120UP
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Fig. WF.3 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
0
100
200
300
400
500
600
700
800
900
1000
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V)
0
50
100
150
200
250
300
350
400
450
500
I
CE
(A)
V
CE
I
CE
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
800
900
4.10 4.20 4.30 4.40 4.50 4.60
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
TEST CURRENT
90% test current
5% V
CE
10% test current
Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
800
900
1000
1100
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
V
CE
(V)
-10
0
10
20
30
40
50
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf

IRGPS40B120UPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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