©2003 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B1
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
RFD16N05, RFD16N05SM, UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
50 V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
16
Refer to Peak Current Curve
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Refer to Figure 5
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
0.48
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 50 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA2-4V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 1 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
C
= 150
o
C
--25µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 16A, V
GS
= 10V (Figure 9) - - 0.047 Ω
Turn-On Time t
(ON)
V
DD
= 25V, I
D
= 8A, R
L
= 3.125Ω,
V
GS
= 10V, R
GS
= 25Ω
(Figure 13)
- - 65 ns
Turn-On Delay Time t
d(ON)
-14- ns
Rise Time t
r
-30- ns
Turn-Off Delay Time t
d(OFF)
-55- ns
Fall Time t
f
-30- ns
Turn-Off Time t
(OFF)
- - 125 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 40V, I
D
≈ 16A,
R
L
= 2.5Ω
I
g(REF)
= 0.8mA
(Figure 13)
- - 80 nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - - 45 nC
Threshold Gate Charge Q
(TH)
V
GS
= 0V to 2V - - 2.2 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
- 900 - pF
Output Capacitance C
OSS
- 325 - pF
Reverse Transfer Capacitance C
RSS
- 100 - pF
Thermal Resistance Junction to Case R
θJC
- - 2.083
o
C/W
Thermal Resistance Junction to Ambient R
θJA
TO-251 and TO-252 - - 100
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 16A - - 1.5 V
Diode Reverse Recovery Time t
rr
I
SD
= 16A, dI
SD
/dt = 100A/µs - - 125 ns
NOTES:
2. Pulse test: pulse width ≤ 250µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD16N05, RFD16N05SM
