©2003 Fairchild Semiconductor Corporation RFD16N05, RFD16N05SM Rev. B1
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
0.1
110
10
0.01
100
1
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
10
20
0
1
234
30
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 7V
40
50
V
GS
= 8V
V
GS
= 10V
V
GS
= 20V
V
GS
= 6V
PULSE DURATION = 80µs
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0468102
0
10
20
30
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
50
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1.0
1.5
2.0
-80 -40 0 40 80 120 160
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80µs
V
GS
= 10V, I
D
= 16A
ON RESISTANCE
DUTY CYCLE = 0.5% MAX
-80 -40 0 40 80 120
160
0
0.5
1.0
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.5
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
200
I
D
= 250µA
RFD16N05, RFD16N05SM
