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IRL2703S

P1-P3P4-P6P7-P9P10-P10
HEXFET
®
Power MOSFET
IRL2703S
PD - 9.1360
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
V
DSS
= 30V
R
DS(on)
= 0.04Ω
I
D
= 24A
S
D
G
11/18/96
PRELIMINARY
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 3.3
R
θJA
Junction-to-Ambient (PCB Mount,steady-state)** –––– –––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 24
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 17 A
I
DM
Pulsed Drain Current 96
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy  77 mJ
I
AR
Avalanche Current 14 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt  3.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
Description
2
D Pak
IRL2703S
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.040 V
GS
= 10V, I
D
= 14A
––– ––– 0.060 V
GS
= 4.5V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 6.4 ––– ––– S V
DS
= 25V, I
D
= 14A
––– ––– 25 V
DS
= 30V, V
GS
= 0V
––– ––– 250 V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 15 I
D
= 14A
Q
gs
Gate-to-Source Charge ––– ––– 4.6 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 9.3 V
GS
= 4.5V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 8.5 ––– V
DD
= 15V
t
r
Rise Time ––– 140 ––– I
D
= 14A
t
d(off)
Turn-Off Delay Time ––– 12 ––– R
G
= 12Ω, V
GS
= 4.5V
t
f
Fall Time ––– 20 ––– R
D
= 1.0Ω, See Fig. 10 
Between lead,
and center of die contact
C
iss
Input Capacitance ––– 450 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 210 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nA
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
ns
µA
Ω
nH
L
S
Internal Source Inductance ––– 7.5 –––
Source-Drain Ratings and Characteristics
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 14A, di/dt ≤ 140A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 570µH
R
G
= 25Ω, I
AS
= 14A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL2703 data and test conditions.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 14A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 65 97 ns T
J
= 25°C, I
F
= 14A
Q
rr
Reverse RecoveryCharge ––– 140 210 nC di/dt = 100A/µs

t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
––– ––– 96
––– ––– 24
S
D
G
IRL2703S
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 175°C
VGS
TO P 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
2345678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source C urrent (A)
T = 175°C
J
A
V = 15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 24A
D
P1-P3P4-P6P7-P9P10-P10

IRL2703S

Mfr. #:
Buy IRL2703S
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 24A D2PAK
Lifecycle:
New from this manufacturer.
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