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IRL2703S

P1-P3P4-P6P7-P9P10-P10
IRL2703S
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 4 8 12 16 20
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 24V
V = 15V
I = 14A
DS
DS
D
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPE RATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
IRL2703S
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
0
4
8
12
16
20
24
25 50 75 100 125 150 175
C
I , Drain Current (Amps)
D
T , Case Temperature (°C)
A
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
JDM thJC
C
IRL2703S
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
V
DS
L
D.U.T.
V
DD
I
AS
t
p
0.01Ω
R
G
+
-
t
p
V
DS
I
AS
V
DD
V
(BR)DSS
5.0 V
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
4.5 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
0
40
80
120
160
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 15V
I
TOP 5.7A
9.9A
BOTTOM 14A
DD
D
P1-P3P4-P6P7-P9P10-P10

IRL2703S

Mfr. #:
Buy IRL2703S
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 24A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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