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GP1S396HCP0F

P1-P3P4-P6P7-P9P10-P12P13-P13
GP1S396HCP0F
1
Sheet No.: OP13018EN
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
GP1S396HCP0F is a phototransistor output,
transmissive photointerrupter with a industry’s
smallest compact and low-profile package by the thin
molding technology. This product detects an object
between the emitter and the detector.
In addition, by narrowing the slit width of the infrared
beam to 0.12mm, this product has improved detection
accuracy.
1. Transmissive with phototransistor output
2. Highlights :
・Compact size
・Low Profile
・Narrow Gap
3. Key Parameters :
・Gap Width : 1.2mm
・Slit Width (detector side) : 0.12mm
・Package : 2.26 × 1.4 × 1.6mm
4. RoHS directive compliant
1. Compliant with RoHS directive (2002/95/EC)
1. General purpose detection of object presence or
motion.
Example : printer, lens control for camera,
various mechanical position detection
■Description
■Features
■Agency approvals/Compliance
■Applications
Gap : 1.2mm Slit : 0.12mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
GP1S396HCP0F
GP1S396HCP0F
2
Sheet No.: OP13018EN
■Internal Connection Diagram
■Outline Dimensions Drawing No. CY14940i02 Scale : 15/1 Unit : mm
Note
1) Unspecified tolerance shall be ± 0.08mm.
2) Dimensions in parenthesis are shown for reference.
3) The dimensions indicated by ※ refer to the those measured from the lead base.
4) The dimensions shown do not include those of burrs.
Burr’s dimensions shall be 0.15Max.
5) There is a possibility that the lead of part is exposed.
6) There is a possibility that the internal device is exposed at the top of the device because of the thin thickness
of the outer package.
7) The mark possibly adheres partially of the side.
8) The dimension size doesn’t contain the mark thickness.
A : Anode
K : Cathode
C : Collector
E : Emitter
GP1S396HCP0F
3
Sheet No.: OP13018EN
Soldering area
0.2mm or more from the bottom face of package
through the substrate.
10%
90%
Output
Input
tr
tf
■Absolute maximum ratings
Ta=25°C
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
30
mA
Reverse voltage
V
R
6
V
Power dissipation
P
50
mW
Output
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
6
V
Collector current
Ic
20
mA
Collector power dissipation
Pc
50
mW
Total power dissipation
Ptot
70
mW
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +100
°C
* Soldering temperature
Tsol
300
°C
* Soldering time : 3 s or less (Hand solder.)
■Electro-optical Characteristics
Ta=25°C
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
=20mA
-
1.2
1.4
V
Reverse current
I
R
V
R
=3V
-
-
10
μA
Output
Collector dark current
I
CEO
V
CE
=20V
-
-
100
nA
Transfer
character-
istics
Collector current
Ic
V
CE
=5V, I
F
=5mA
100
-
400
μA
Response time
(Rise)
tr
V
CE
=5V, Ic=100μA
R
L
=1kΩ
-
30
120
μs
(Fall)
tf
-
30
120
μs
Collector-emitter
saturation voltage
V
CE
(sat)
I
F
=10mA, Ic=40μA
-
-
0.4
V
(Test circuit for response time)
Vcc
R
L
Test pin
P1-P3P4-P6P7-P9P10-P12P13-P13

GP1S396HCP0F

Mfr. #:
Buy GP1S396HCP0F
Manufacturer:
Sharp Microelectronics
Description:
Optical Switches, Transmissive, Phototransistor Output SMD Photointerrupter
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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