IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91378
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 9.7 mH, R
g
= 25 , peak I
L
= - 5.3 A.
c. I
SD
- 5.3 A, dI/dt - 80 A/μs, V
DD
40 V, T
J
150 °C, suggested R
g
= 24 .
d. 0.063" (1.6 mm) from case.
PRODUCT SUMMARY
V
DS
(V) - 50
R
DS(on)
()V
GS
= - 10 V 0.50
Q
g
(Max.) (nC) 9.1
Q
gs
(nC) 3.0
Q
gd
(nC) 5.9
Configuration Single
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9010-GE3 SiHFR9010TR-GE3
a
SiHFR9010TRL-GE3
a
SiHFU9010-GE3
Lead (Pb)-free
IRFR9010PbF IRFR9010TRPbF
a
IRFR9010TRLPbF
a
IRFU9010PbF
SiHFR9010-E3 SiHFR9010T-E3
a
SiHFR9010TL-E3
a
SiHFU9010-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 50
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 5.3
AT
C
= 100 °C - 3.3
Pulsed Drain Current
a
I
DM
- 21
Linear Derating Factor 0.20 W/°C
Single Pulse Avalanche Energy
b
E
AS
136 mJ
Repetitive Avalanche Current
a
I
AR
- 5.3 A
Repetitive Avalanche Energy
a
E
AR
2.5 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
25 W
Peak Diode Recovery dV/dt
c
dV/dt 5.8 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
