IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
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Vishay Siliconix
S13-0167-Rev. D, 04-Feb-13
6
Document Number: 91378
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Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Fig. 15a - Switching Time Waveforms
Fig. 15b - Switching Time Test Circuit
Fig. 16a - Basic Gate Charge Waveform
Fig. 16b - Gate Charge Test Circuit
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
- 10 V
+
-
V
DS
V
DD
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
