NCV7341
http://onsemi.com
10
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (Pin 2). Positive
currents flow into the IC. Sinking current means the current
is flowing into the pin; sourcing current means the current
is flowing out of the pin.
Absolute Maximum Ratings
Stresses above those listed in the following table may
cause permanent device failure. Exposure to absolute
maximum ratings for extended periods may affect device
reliability.
Table 5. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Min. Max. Unit
V
BAT
Supply voltage −0.3 58 V
V
CC
Supply voltage −0.3 +7 V
V
IO
Supply voltage −0.3 +7 V
V
CANH
DC voltage at pin CANH 0 < V
CC
< 5.25 V;
no time limit
−58 +58 V
V
CANL
DC voltage at pin CANL 0 < V
CC
< 5.25 V;
no time limit
−58 +58 V
V
CANL
−V
CANH
DC voltage between bus pins CANH and CANL 0 < V
CC
< 5.25 V;
no time limit
−58 +58 V
V
SPLIT
DC voltage at pin VSPLIT 0 < V
CC
< 5.25 V;
no time limit
−58 +58 V
V
INH
DC voltage at pin INH −0.3 VBAT+0.3 V
V
WAKE
DC voltage at pin WAKE −0.3 58 V
V
TxD
DC voltage at pin TxD −0.3 7 V
V
RxD
DC voltage at pin RxD −0.3 V
IO
+ 0.3 V
V
STB
DC voltage at pin STB −0.3 7 V
V
EN
DC voltage at pin EN −0.3 7 V
V
ERR
DC voltage at pin ERR −0.3 V
IO
+ 0.3 V
V
tran(CANH)
Transient voltage at pin CANH (Note 1) −300 +300 V
V
tran(CANL)
Transient voltage at pin CANL (Note 1) −300 +300 V
V
tran(VSPLIT)
Transient voltage at pin VSPLIT (Note 1) −300 +300 V
V
esd(CANL/CANH/
VSPLIT,
VBAT,
WAKE)
Electrostatic discharge voltage at pins intended to be
wired outside of the module
(CANH, CANL, V
SPLIT
, VBAT, WAKE)
(Note 2)
(Note 4)
−4
−500
4
500
kV
V
V
esd
Electrostatic discharge voltage at all other pins (Note 2)
(Note 4)
−3
−500
3
500
kV
V
Latch−up Static latch−up at all pins (Note 3) 120 mA
T
stg
Storage temperature −50 +150 °C
T
amb
Ambient temperature −50 +125 °C
T
junc
Maximum junction temperature −50 +180 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 9).
2. Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
3. Static latch-up immunity: Static latch-up protection level when tested according to EIA/JESD78.
4. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
