JULY 2014
DSC-5297/06
1
©2014 Integrated Device Technology, Inc.
Features
128K x 36 memory configuration
Supports high system speed:
Commercial:
200MHz 3.1ns clock access time
Commercial and Industrial:
183MHz 3.3ns clock access time
166MHz 3.5ns clock access time
LBO input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte write
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
2.5V I/O
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
Compliant)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
Description
The IDT71V25761 are high-speed SRAMs organized as 128K x 36.
The IDT71V25761 SRAMs contain write, data, address and control
registers. Internal logic allows the SRAM to generate a self-timed write
based upon a decision which can be left until the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V25761 can provide four cycles of data for
a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operation is selected (ADV=LOW), the subsequent three cycles of output
data will be available to the user on the next three rising clock edges. The
order of these three addresses are defined by the internal burst counter
and the LBO input pin.
The IDT71V25761 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
Pin Description Summary
A
0
-A
17
Address Inputs Input Synchronous
CE
Chip Enable Input Synchronous
CS
0
, CS
1
Chip Selects Input Synchronous
OE
Output Enable Input Asynchronous
GW
Global Write Enable Input Synchronous
BWE
Byte Write Enable Input Synchronous
BW
1
, BW
2
, BW
3
, BW
4
(1 )
Individual Byte Write Selects Input Synchronous
CLK Clock Input N/A
ADV
Burst Address Advance Input Synchronous
ADSC
Address Status (Cache Controller) Input Synchronous
ADSP
Address Status (Processor) Input Synchronous
LBO
Linear / Interleaved Burst Order Input DC
TMS Test Mode Select Input Synchronous
TDI Test Data Input Input Synchronous
TCK Test Clock Input N/A
TDO Test Data Output Output Synchronous
TRST
JTAG Reset (Optional) Input Asynchronous
ZZ Sleep Mode Input Asynchronous
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
Data Input / Output I/O Synchronous
V
DD
, V
DDQ
Core Power, I/O Power Supply N/A
V
SS
Ground Supply N/A
5297 tbl 01
128K X 36
3.3V Synchronous SRAMs
2.5V I/O, Pipelined Outputs,
Burst Counter, Single Cycle Deselect
IDT71V25761YS/S
6.42
2
IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Symbol Pin Function I/O Active Description
A
0
-A
17
Address Inputs I N/A Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK
and ADSC Low or ADSP Low and CE Low.
ADSC
Address Status
(Cache Controller)
I LOW Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is used to load the
address registers with new addresses.
ADSP
Address Status
(Processor)
I LOW Synchronous Address Status from Processor. ADSP is an active LOW input that is used to load the address
registers with new addresses. ADSP is gated by CE.
ADV
Burst Address
Advance
I LOW Synchronous Address Advance. ADV is an active LOW input that is used to advance the internal burst
counter, controlling burst access after the initial address is loaded. When the input is HIGH the burst counter is
not incremented; that is, there is no address advance.
BWE
Byte Write Enable I LOW Synchronous byte write enable gates the byte write inputs BW
1
-BW
4
. If BWE is LOW at the rising edge of CLK
then BWx inputs are passed to the next stage in the circuit. If BWE is HIGH then the byte write inputs are
blocked and only GW can initiate a write cycle.
BW
1
-BW
4
Individual Byte
Write Enables
I LOW Synchronous byte write enables. BW
1
controls I/O
0-7
, I/O
P1
, BW
2
controls I/O
8-15
, I/O
P2
, etc. Any active byte
write causes all outputs to be disabled.
CE
Chip Enable I LOW Synchronous chip enable. CE is used with CS
0
and CS
1
to enable the IDT71V25761/781. CE also gates ADSP.
CLK Clock I N/A This is the clock input. All timing references for the device are made with respect to this input.
CS
0
Chip Select 0 I HIGH Synchronous active HIGH chip select. CS
0
is used with CE and CS
1
to enable the chip.
CS
1
Chip Select 1 I LOW Synchronous active LOW chip select. CS
1
is used with CE and CS
0
to enable the chip.
GW
Global Write
Enable
I LOW Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on the rising edge of
CLK. GW supersedes individual byte write enables.
I/O
0
-I/O
31
I/O
P1
-I/O
P4
Data Input/Output I/O N/A Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered and
triggered by the rising edge of CLK.
LBO
Linear Burst Order I LOW Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst sequence is selected.
When LBO is LOW the Linear burst sequence is selected. LBO is a static input and must not change state
while the device is operating.
OE
Output Enable I LOW Asynchronous output enable. When OE is LOW the data output drivers are enabled on the I/O pins if the chip
is also selected. When OE is HIGH the I/O pins are in a high-impedance state.
TMS Test ModeSelect I N/A Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
TDI Test Data Input I N/A
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an
internal pullup.
TCK Test Clock I N/A
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured on rising edge of TCK,
while test outputs are driven from the falling edge of TCK. This pin has an internal pullup.
TDO Test DataOutput O N/A
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the
TAP controller.
TRST
JTAG Reset
(Optional)
ILOW
Optional Asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset
occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used TRST can
be left floating. This pin has an internal pullup. Only available in BGA package.
ZZ Sleep Mode I HIGH
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V25761/781
to its lowest power consumption level. Data retention is guaranteed in Sleep Mode.This pin has an internal
pull down.
V
DD
Power Supply N/A N/A 3.3V core power supply.
V
DDQ
Power Supply N/A N/A 2.5V I/O Supply.
V
SS
Ground N/A N/A Ground.
NC No Connect N/A N/A NC pins are not electrically connected to the device.
5297 tbl 02
Pin Definitions
(1)
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
3
Functional Block Diagram

IDT71V25761S166PF8

Mfr. #:
Manufacturer:
Description:
IC SRAM 4.5M PARALLEL 100TQFP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union