January 2008 Rev 1 1/12
12
STW24NK55Z
N-channel 550 V - 0.18 - 23 A - TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
Pw
STW24NK55Z 550 V <0.22 23 A 285 W
1
2
3
TO-247
Table 1. Device summary
Order code Marking Package Packaging
STW24NK55Z 24NK55Z TO-247 Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Contents STW24NK55Z
2/12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)
STW24NK55Z Electrical ratings
3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 550 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 23 A
I
D
Drain current (continuous) at T
C
=100 °C 10.35 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 92 A
P
TOT
Total dissipation at T
C
= 25 °C 285 W
Derating factor 2.27 W/°C
dv/dt
(2)
2. I
SD
23 A, di/dt 200 A/µs,V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
T
stg
Storage temperature -55 to 150°C °C
T
J
Max. perating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.44 °C/W
R
thj-a
Thermal resistance junction-ambient max 50 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
23 A
E
AS
Single pulse avalanche energy
(starting Tj=25 °C, I
D
=I
AR
, V
DD
=50 V)
400 mJ
Obsolete Product(s) - Obsolete Product(s)

STW24NK55Z

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 550V 23A TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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