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STW24NK55Z

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics STW24NK55Z
4/12
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0
550 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
1
50
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
±10 µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
33.754.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 11.5 A
0.18 0.22 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
V
DS
=15 V, I
D
= 11.5 A
20 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
4397.5
480.5
116
pF
pF
pF
C
oss eq
(2)
.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0 to 480 V
250 pF
R
G
Intrinsic gate resistance
f=1 MHz, open drain 2.3 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 440 V, I
D
= 23 A
V
GS
=10 V
(see Figure 15)
130
25
76
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 275 V, I
D
=11.5 A,
R
G
= 4.7 Ω, V
GS
=10 V
(see Figure 14)
30
35
136
88
ns
ns
ns
ns
Obsolete Product(s) - Obsolete Product(s)
STW24NK55Z Electrical characteristics
5/12
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 23 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 92 A
V
SD
(2)
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
I
SD
= 23 A, V
GS
=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 23 A, V
DD
= 50 V
di/dt = 100 A/µs,
(see Figure 18)
508
7.4
29
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 23 A,
di/dt = 100 A/µs,
V
DD
= 50 V, Tj=150 °C
(see Figure 18)
608
9.7
31.8
ns
µC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30 V
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics STW24NK55Z
6/12
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BV
DSS
vs temperature Figure 7. Static drain-source on resistance
0 5 10 15 20 25 30 VDS(V)
0
10
20
30
40
50
60
70
ID(A)
HV41790
5V
6V
7V
V
GS =10V
0246810
VGS(V)
0
10
20
30
40
50
60
70
ID(A)
HV41795
V
DS = 20V
5 101520
I
D
(A)
0.12
0.14
0.15
0.18
R
DS(on)
(Ω)
HV41880
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12

STW24NK55Z

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Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 550V 23A TO-247
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